FDW2501NZ

FET, MOSFET Arrays Overview

The FDW2501NZ is a dual N-channel PowerTrench MOSFET designed for power management applications with gate drive voltages ranging from 2.5V to 12V. It features a low-profile TSSOP-8 package and offers a drain-source voltage of 20V and continuous drain current of 5.5A. The device provides an on-resistance of 18mΩ at VGS=4.5V and 25mΩ at VGS=2.5V. Key electrical parameters include a breakdown voltage of 20V, total gate charge of 17nC typ, and input capacitance of 1286pF. Thermal resistance junction-to-ambient is 100°C/W on a 1-inch² copper pad.

FET, MOSFET Arrays Feature Summary

• Optimized for low-voltage gate drive operation down to 2.5V
• High-performance trench technology for extremely low on-resistance
• Integrated ESD protection diode between gate and source

FET, MOSFET Arrays Applications

• Load switch circuits
• Motor drive systems
• DC/DC conversion topologies
• Power management modules

FET, MOSFET Arrays Procurement Notes

Verify the component status as Fairchild Semiconductor was acquired by onsemi. Confirm that the datasheet revision matches the specific manufacturing lot requirements. Ensure the ordering suffix aligns with the required reel size and tape width specifications for automated assembly processes.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring low RDS(ON) at reduced gate drive voltages. Evaluate thermal performance based on the specified junction-to-ambient resistance under your specific PCB copper pad constraints. Consider the extended VGSS range for battery-powered applications requiring robust gate protection.

FET, MOSFET Arrays Part Context

This device utilizes Fairchild's advanced PowerTrench process technology. It belongs to the family of rugged gate MOSFETs optimized for wide gate drive voltage ranges. The dual configuration allows for efficient implementation in bridge or high-current single-ended applications within a compact surface-mount footprint.

FET, MOSFET Arrays Replacement Considerations

Check for equivalent dual N-channel MOSFETs with matching 20V rating and TSSOP-8 package. Verify that alternative parts support the 2.5V gate drive specification and meet the required 18mΩ on-resistance threshold at the target operating temperature.