FET, MOSFET Arrays FDW2508P product image

FDW2508P

$0.36
  • Description:MOSFET 2P-CH 12V 6A 8TSSOP
  • Series:PowerTrench®

SKU:584e7baf1752 Category: Brand:

  
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FDW2508P is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 12V 6A 8TSSOP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FDW2508P

  • Description:MOSFET 2P-CH 12V 6A 8TSSOP
  • Series:PowerTrench®
  • Mfr:onsemi
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:6A
  • Rds On (Max) @ Id, Vgs:18mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id:1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds:2644pF @ 6V
  • Power - Max:1W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package:8-TSSOP
  • Grade:-
  • Qualification:-

FET, MOSFET Arrays datasheet and documents for FDW2508P

FDW2508P

FET, MOSFET Arrays Overview

The FDW2508P is a dual P-channel MOSFET utilizing PowerTrench technology, optimized for low-voltage battery power management. It features a TSSOP-8 package with –12 V drain-source voltage and –6 A continuous drain current. The device specifies RDS(on) at 18 mΩ (VGS = –4.5 V), 22 mΩ (VGS = –2.5 V), and 30 mΩ (VGS = –1.8 V). Gate charge is typically 26 nC. Thermal resistance is 100 °C/W on a 1-inch² copper pad. Operating junction temperature ranges from –55°C to +150°C.

FET, MOSFET Arrays Feature Summary

  • Dual P-channel configuration in a low-profile TSSOP-8 package
  • Optimized for battery power management applications
  • High-performance trench technology for extremely low RDS(on)
  • Low gate charge of 26 nC typical

FET, MOSFET Arrays Applications

  • Power management circuits
  • Load switch implementations
  • Battery protection systems

FET, MOSFET Arrays Procurement Notes

Verify the datasheet revision level and manufacturer documentation before integration. Confirm that the TSSOP-8 pinout matches the design schematic. Ensure thermal management strategies align with the specified junction-to-ambient resistance values under actual board conditions. Validate electrical parameters against the official specification sheet.

FET, MOSFET Arrays Selection Notes

Select this component when dual P-channel switching is required in a compact footprint. The –1.8 V specified operation makes it suitable for low-voltage logic interfaces. Consider the 18 mΩ on-resistance at –4.5 V for efficiency requirements. Verify that the –12 V breakdown voltage meets the system's maximum voltage stress limits.

FET, MOSFET Arrays Part Context

Manufactured by Fairchild Semiconductor, now part of onsemi. This device belongs to the PowerTrench family of low-voltage MOSFETs. The FDW2508P specifically addresses the need for dual-channel solutions in portable electronics where space and power efficiency are critical constraints.

FET, MOSFET Arrays Replacement Considerations

Check for updated revisions or equivalent dual P-channel devices from onsemi or other manufacturers. Ensure pin compatibility and electrical specifications match the original design requirements before substitution.

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