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FDY2000PZ is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET 2P-CH 20V 0.35A SOT563F. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FDY2000PZ
- Description：MOSFET 2P-CH 20V 0.35A SOT563F
- Series：PowerTrench®
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：350mA
- Rds On (Max) @ Id, Vgs：1.2Ohm @ 350mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：1.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：100pF @ 10V
- Power - Max：446mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SOT-563, SOT-666
- Supplier Device Package：SOT-563F
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FDY2000PZ
FET, MOSFET Arrays Overview
The FDY2000PZ is a dual P-channel enhancement-mode MOSFET from onsemi's PowerTrench series, housed in a surface-mount SC-89 (SOT-563F) package with six pins. It features a maximum drain-source voltage of 20 V and a continuous drain current of 350 mA. The device has a typical on-resistance of 1.2 Ω and a gate charge of 2.2 nC at -4 V. Maximum power dissipation is 625 mW, operating within a temperature range of -55°C to 150°C.
FET, MOSFET Arrays Feature Summary
- Dual P-channel configuration for space-efficient circuit design
- Logic-level gate drive capability for direct microcontroller interfacing
- Low gate charge for efficient switching performance
FET, MOSFET Arrays Applications
- Battery protection circuits
- Load switch applications
- Power management systems
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision and electrical characteristics against the manufacturer's official documentation before integration. Confirm that the SC-89 footprint matches the PCB layout requirements. Ensure thermal management strategies account for the 625 mW power dissipation limit under expected operating conditions.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual P-channel solution is required for low-voltage applications. The 20 V rating suits single-cell lithium battery systems. Consider the 1.2 Ω on-resistance for current handling needs and verify compatibility with standard logic level gate voltages.
FET, MOSFET Arrays Part Context
This part belongs to onsemi's PowerTrench MOSFET family, designed for high-efficiency power switching. The FDY2000PZ specifically integrates two isolated P-channel transistors in a small outline package, optimizing board space for portable electronics and battery-powered devices requiring dual-switch functionality.
FET, MOSFET Arrays Replacement Considerations
FDY1002PZ: Dual P-channel MOSFET with similar 20 V rating but lower current capacity (830 mA vs 350 mA) and different on-resistance characteristics.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
