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The FF1400R12IP4BOSA1 is a PrimePACK™3 half-bridge IGBT module featuring Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It provides a collector-emitter voltage of 1200 V and a continuous DC collector current of 1400 A at 100°C case temperature. The typical saturation voltage is 2.05 V, with a total power dissipation of 7.65 kW. Integrated NTC thermistor offers a rated resistance of 5 kΩ at 25°C. The module weighs 1200 g and supports an operating junction temperature range from -40°C to 150°C.
Verify the BOSA1 suffix against official Infineon documentation to confirm specific ordering or packaging details. Ensure compatibility with PrimePACK™3 mounting standards and thermal interface materials. Confirm RoHS compliance status through the manufacturer's certificate before finalizing procurement specifications.
Select this module for high-power applications requiring robust short-circuit withstand capability and low saturation voltage. Evaluate thermal resistance values based on the specific heatsink interface material used. Verify that the gate drive circuit accommodates the specified peak gate-emitter voltage limits and internal gate resistor characteristics.
This component belongs to the Infineon PrimePACK™3 series, designed for industrial and traction applications. It utilizes Trench/Fieldstop IGBT4 technology combined with Emitter Controlled 4 diodes. The package provides high power density and reliable thermal cycling performance for demanding power conversion environments.
FF1400R12IP4