FF150R12RT4HOSA1

Overview

The FF150R12RT4HOSA1 is a half-bridge IGBT module manufactured by Infineon Technologies, utilizing trench field-stop technology. It features a maximum collector-emitter voltage of 1200 V and a nominal continuous collector current of 150 A. The device has a typical saturation voltage of 2.15 V at 150 A and 15 V gate drive. Maximum power dissipation is rated at 790 W, with an operating junction temperature range from -40°C to 150°C. The component is housed in a flange-mount module package with five terminals.

Feature Summary

• Half-bridge configuration with series-connected elements and center tap
• Trench field-stop IGBT technology for optimized switching performance
• Isolated base plate for direct mounting applications

Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Inverter systems

Procurement Notes

Verify the obsolete status of this component before integration into new designs. Confirm that the specific suffix HOSA1 aligns with required RoHS compliance and packaging specifications. Cross-reference the official datasheet for any updates regarding availability or recommended design alternatives due to its discontinued lifecycle stage.

Selection Notes

Select this module for applications requiring 1200 V blocking capability and 150 A current handling in a compact form factor. Ensure thermal management solutions support the 790 W power dissipation limit. Verify that the screw-mount installation style fits the mechanical constraints of the target chassis design.

Part Context

This part belongs to the broader category of Infineon IGBT modules designed for industrial power conversion. It shares the 1200 V voltage class common in medium-power applications. The specific RT4 designation indicates the generation of trench field-stop technology used within this product line.

Replacement Considerations

FF150R12RT4