FF17MR12W1M1HB70BPSA1

FET, MOSFET Arrays Overview

The FF17MR12W1M1HB70BPSA1 is a half-bridge module featuring CoolSiC Trench MOSFET technology with a 1200 V drain-source voltage rating. It provides a continuous DC drain current of 50 A and a repetitive peak current of 100 A at a junction temperature of 175 °C. The device utilizes PressFIT contact technology and incorporates an integrated NTC thermistor for thermal monitoring. Key electrical parameters include a typical on-resistance of 16.2 mΩ at 25 °C, a stray inductance of 9 nH, and a thermal resistance from junction to heat sink of 0.479 K/W.

FET, MOSFET Arrays Feature Summary

• Integrates CoolSiC Trench MOSFETs for low switching losses and high-frequency operation.
• Features PressFIT contact technology for robust mounting without soldering.
• Includes an integrated NTC temperature sensor for precise thermal management.
• Utilizes an AlN substrate to achieve low thermal resistance.

FET, MOSFET Arrays Applications

• High-frequency switching applications
• DC/DC converters
• Uninterruptible Power Supply (UPS) systems
• DC chargers for electric vehicles

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix B70 against official Infineon documentation to confirm the exact configuration. Ensure that the application design accounts for the recommended gate voltages and thermal constraints specified in the datasheet. Confirm compliance with industrial qualification standards such as IEC 60747 and IEC 60068 prior to integration.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high efficiency and compact form factors due to its low stray inductance and thermal performance. Consider the 1200 V rating and 50 A continuous current capability when sizing for load requirements. Evaluate the PressFIT interface compatibility with the target PCB or busbar system during the mechanical design phase.

FET, MOSFET Arrays Part Context

This component belongs to the EasyDUAL series of discrete semiconductor modules manufactured by Infineon Technologies. It is part of the M1H product line utilizing silicon carbide technology. The module is designed for industrial applications and is qualified according to relevant international standards for reliability and safety.

FET, MOSFET Arrays Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Cross-referencing should be performed based on electrical ratings, package dimensions, and thermal characteristics to ensure functional equivalence.

FET, MOSFET Arrays FAQ

What is the maximum operating junction temperature for this module?

The maximum operating junction temperature under switching conditions is 150 °C, while the absolute maximum rating allows up to 175 °C.

How is the thermal resistance defined for this component?

The thermal resistance from junction to heat sink is specified as 0.479 K/W per MOSFET, measured with a grease thermal conductivity of 1 W/(m·K).

Does the module include protection features?

The module includes an integrated NTC thermistor for temperature monitoring but does not contain internal active short-circuit protection circuits.