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FF1MR12KM1HHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF1MR12KM1HHPSA1
- Description：MOSFET
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：-
- Configuration：-
- FET Feature：-
- Drain to Source Voltage (Vdss)：-
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：-
- Vgs(th) (Max) @ Id：-
- Gate Charge (Qg) (Max) @ Vgs：-
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF1MR12KM1HHPSA1
FET, MOSFET Arrays Overview
The FF1MR12KM1HHPSA1 is a CoolSiC™ Trench MOSFET half-bridge module in the 62 mm C-Series package. It features a 1200 V drain-source voltage and a nominal drain current of 560 A, with a repetitive peak current rating of 1120 A. The device utilizes silicon carbide technology for high current density and low switching losses. Electrical characteristics include a maximum on-resistance of 3.16 mΩ at 175 °C and a gate threshold voltage ranging from 3.45 V to 5.15 V. Thermal management is supported by a junction-to-case resistance of 0.083 K/W per switch.
FET, MOSFET Arrays Feature Summary
- Utilizes CoolSiC™ Trench MOSFET technology for high efficiency and low switching losses
- Provides 4 kV AC insulation isolation between terminals and heatsink
- Designed for industrial applications with qualified reliability standards
- Features integrated body diode with optimized forward voltage characteristics
FET, MOSFET Arrays Applications
- Uninterruptible Power Supply (UPS) systems
- Solar energy applications
- DC/DC converters
- Energy storage systems
- Electric vehicle DC chargers
FET, MOSFET Arrays Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm mechanical or electrical variations. Ensure compatibility with required mounting torque specifications and thermal interface materials. Confirm that the component meets all relevant IEC safety standards for the intended industrial application environment before finalizing procurement.
FET, MOSFET Arrays Selection Notes
Select this module for high-frequency switching applications requiring robust performance under overload conditions. Consider the operating temperature range up to 175 °C and the specific gate drive requirements for optimal switching behavior. Evaluate the stray inductance and thermal resistance parameters to ensure effective heat dissipation within the target system design constraints.
FET, MOSFET Arrays Part Context
This component belongs to the Infineon CoolSiC™ MOSFET G1 Modules family, specifically the 62 mm C-Series lineup. It represents a discrete semiconductor power module designed for demanding power conversion tasks. The product line emphasizes high current density and reliability for modern electric mobility and renewable energy infrastructure.
FET, MOSFET Arrays Replacement Considerations
Consult official cross-reference tools for parametrically similar parts. Verify that any substitute matches the 1200 V rating, 62 mm footprint, and thermal characteristics. Ensure the replacement maintains equivalent switching speed and insulation coordination for direct integration.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
