FF1MR12KM1HPHPSA1

$472.72

Description：MOSFET
Series：-

SKU:96a74151cd11 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF1MR12KM1HPHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF1MR12KM1HPHPSA1

Description：MOSFET
Series：-
Mfr：Infineon Technologies
Package：Tray
Technology：-
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF1MR12KM1HPHPSA1

FF1MR12KM1HPHPSA1

FET, MOSFET Arrays Overview

The FF1MR12KM1HPHPSA1 is a 62 mm C-Series half-bridge module featuring CoolSiC™ Trench MOSFET technology. It provides a drain-source voltage of 1200 V, with continuous DC drain current rated at 475 A and repetitive peak current at 1120 A. The device incorporates pre-applied thermal interface material and offers low switching losses alongside high current density.

FET, MOSFET Arrays Feature Summary

Integrated pre-applied thermal interface material for simplified assembly
High current density design optimized for compact power conversion
Low switching energy loss characteristics for efficient operation
Industrial qualification compliant with IEC 60747, 60749, and 60068 standards

FET, MOSFET Arrays Applications

Uninterruptible Power Supply (UPS) systems
Solar energy applications
DC/DC converters
Energy storage systems
Electric vehicle DC chargers

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix HPSA1 against official documentation to confirm the inclusion of pre-applied thermal interface material. Ensure compliance with industrial application requirements by referencing relevant IEC test standards during procurement validation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high-frequency switching and robust thermal management within a 62 mm footprint. Consider the 1200 V rating and 475 A continuous current capability when sizing heatsinks and gate drive circuits for target efficiency levels.

FET, MOSFET Arrays Part Context

This module belongs to Infineon's 62 mm C-Series lineup utilizing CoolSiC™ G1 technology. It serves as a discrete semiconductor solution designed to replace silicon-based counterparts in high-power density applications, offering superior thermal performance and reduced system volume.