FF1MR12MM1HPB11BPSA1

FET, MOSFET Arrays Overview

The FF1MR12MM1HPB11BPSA1 is a CoolSiC MOSFET half-bridge module manufactured by Infineon Technologies. It utilizes Silicon Carbide (SiC) technology and operates at a drain-source voltage of 1200 V. The component features an M1H series design with a press-fit installation style in the EasyDUAL package. It includes integrated gate driver capabilities via EiceDRIVER technology for advanced control.

FET, MOSFET Arrays Feature Summary

• Integrated EiceDRIVER gate driver technology for optimized switching performance
• Silicon Carbide (SiC) construction for high thermal stability
• Press-fit mounting interface for secure mechanical connection

FET, MOSFET Arrays Applications

• Industrial motor drives
• Uninterruptible power supplies (UPS)
• Solar inverters
• Electric vehicle charging stations

FET, MOSFET Arrays Procurement Notes

Verify the specific suffix BPSA1 against official Infineon documentation to confirm exact manufacturing lot and revision details. Ensure compatibility with existing PCB footprints and cooling systems designed for the EasyDUAL form factor before procurement.

FET, MOSFET Arrays Selection Notes

Select this module for applications requiring high efficiency and compact size in medium-power conversion systems. The integrated driver simplifies layout compared to discrete solutions. Confirm that the system voltage does not exceed the 1200 V rating and that thermal management meets the junction temperature requirements.

FET, MOSFET Arrays Part Context

This part belongs to the CoolSiC M1H family, representing Infineon's third-generation silicon carbide technology. It is designed to replace traditional silicon IGBTs in high-frequency applications, offering lower switching losses and higher operating temperatures.

FET, MOSFET Arrays Replacement Considerations

Direct replacements within the same EasyDUAL footprint include other FF1MR12M variants from the M1H series. Verify pinout compatibility and thermal resistance specifications when substituting with older generation SiC modules or competing brands.