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Product Detailed Parameters
- Description：IGBT MOD 1200V 320A 1050W
- Series：EconoDUAL™ 3
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：Trench Field Stop
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：2.15V @ 15V, 225A
- Input：Standard
- NTC Thermistor：Yes
- Operating Temperature：-40°C ~ 150°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：320 A
- Power - Max：1050 W
- Current - Collector Cutoff (Max)：3 mA
- Input Capacitance (Cies) @ Vce：13 nF @ 25 V
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Overview
The FF225R12ME4B11BPSA1 is a dual IGBT module from Infineon's EconoDUAL™3 series, utilizing Trench/Fieldstop IGBT4 technology and an emitter-controlled HE diode. It features a PressFIT connection method and includes an integrated NTC thermistor for thermal monitoring. The module supports a collector-emitter voltage of 1200 V and a continuous DC collector current of 225 A at a case temperature of 95 °C. It operates within a junction temperature range of -40 °C to 150 °C under switching conditions.
Feature Summary
- Integrates Trench/Fieldstop IGBT4 technology with an emitter-controlled high-efficiency diode for optimized switching performance.
- Features a PressFIT terminal design that eliminates wire bonding and soldering requirements for reliable mechanical connections.
- Includes an embedded NTC thermistor for precise internal temperature monitoring and protection.
- Constructed with a copper baseplate and Al2O3 isolation layer to ensure robust electrical insulation and efficient heat dissipation.
Applications
- Motor drives
- Servo drives
- UPS systems
- Wind turbines
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm the exact configuration, as variations may exist within the product family. Ensure compatibility with recommended gate drivers listed in the manufacturer's guide. Confirm compliance with industrial qualification standards such as IEC 60747 and IEC 60068 for the intended application environment.
Selection Notes
Select this module for applications requiring high current density and reliable press-fit mounting. Evaluate thermal resistance values and stray inductance specifications against system constraints. Ensure the operating junction temperature remains within the specified limits during peak load conditions. Verify that the gate drive circuitry matches the required voltage levels and internal gate resistor characteristics.
Part Context
This component belongs to the Infineon EconoDUAL™3 product line, designed for medium power applications. It represents an evolution in IGBT module packaging, combining advanced semiconductor technology with a standardized mechanical footprint. The series is widely used in industrial power conversion systems where space efficiency and thermal performance are critical.
Replacement Considerations
Consult official replacement lists for direct substitutes. Cross-referencing with similar models in the EconoDUAL™3 series requires verification of pinout compatibility and electrical parameter alignment.
FAQ
What is the maximum repetitive peak collector current?
The maximum repetitive peak collector current (ICRM) is 450 A, limited by the operating junction temperature.
How is the module electrically isolated?
The module uses an Al2O3 ceramic substrate for basic insulation (Class 1 per IEC 61140) between the terminals and the copper baseplate.
What is the rated resistance of the integrated NTC thermistor?
The rated resistance (R25) of the NTC thermistor is 5 kΩ at a temperature of 25 °C.
