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The FF225R65T3E3P2BPSA1 is an XHP™3 IGBT module featuring Trench/Fieldstop IGBT3 and emitter-controlled diodes. It provides a collector-emitter voltage (VCES) of 6500 V and a nominal continuous DC collector current (ICDC) of 225 A at TC = 80 °C. The repetitive peak collector current (ICRM) reaches 450 A. Key electrical parameters include a typical VCE,sat of 3.40 V at Tvj = 25 °C and a forward voltage (VF) of 3.55 V for the diode. The module utilizes an AlSiC base plate, offers enhanced insulation of 10.4 kV AC, and supports a junction temperature range from -50 °C to 125 °C.
Verify the specific ordering suffix P2BPSA1 against official Infineon documentation to confirm exact packaging or marking variations. Ensure compliance with industrial qualification standards such as IEC 60747, 60749, and 60068 before integration. Confirm that the component meets the required insulation coordination and creepage distances for the target application environment.
Select this module for high-voltage applications requiring 6500 V blocking capability and 225 A continuous current. Consider the AlSiC substrate for superior thermal cycling performance compared to standard copper base plates. Evaluate the gate charge and switching energy losses against the available drive circuit capabilities to optimize efficiency within the specified operating temperature range.
This component belongs to the XHP™3 product family, which integrates third-generation trench field-stop IGBT technology with emitter-controlled diodes. The series is engineered for high power density and reliability in demanding industrial environments. The XHP™3 modules are designed to meet stringent mechanical and electrical requirements for heavy-duty power conversion systems.
Direct substitutes must match the 6500 V rating, 225 A current capacity, and XHP™3 package dimensions. Verify pinout compatibility and thermal resistance values. Cross-reference with other Infineon XHP™3 variants if minor parameter adjustments are acceptable.