FF23MR12W1M1C11BPSA1

Description：LOW POWER EASY AG-EASY1BM-2
Series：*

SKU:fc13fe6d5aa6 Category: IGBT Modules Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：LOW POWER EASY AG-EASY1BM-2
Series：*
Mfr：Infineon Technologies
Package：Tray
IGBT Type：-
Configuration：-
Vce(on) (Max) @ Vge, Ic：-
Input：-
NTC Thermistor：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Power - Max：-
Current - Collector Cutoff (Max)：-
Input Capacitance (Cies) @ Vce：-

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FF23MR12W1M1C11BPSA1

Overview

The FF23MR12W1M1C11BPSA1 is a CoolSiC MOSFET module from Infineon Technologies, utilizing Silicon Carbide (SiC) technology. It features an N-Channel configuration with a dual layout housed in the AG-EASY1BM-2 package. Key electrical parameters include a drain-source breakdown voltage of 1.2 kV and a continuous drain current of 50 A. The device exhibits a low on-resistance of 22.5 mOhms and operates within a temperature range of -40 C to +150 C. Gate-source voltage limits are specified at -10 V and +20 V, with a threshold voltage of 3.45 V. Switching characteristics include a typical turn-on delay of 12 ns and a turn-off delay of 43.5 ns.

Feature Summary

Utilizes Silicon Carbide (SiC) technology for high-performance power switching
Features a dual N-Channel configuration within the AG-EASY1BM-2 press-fit package
Designed for low power applications with optimized thermal management

Applications

High-frequency power conversion systems
Industrial motor drives
Renewable energy inverters

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status via official documentation before integration. Ensure handling procedures adhere to electrostatic discharge (ESD) protection standards required for SiC modules. Validate package compatibility with existing PCB layouts and cooling infrastructure. Review datasheet revisions for any updates to mechanical dimensions or electrical ratings prior to final design approval.

Selection Notes

Select this module for applications requiring high voltage blocking capabilities and efficient switching performance. The 1.2 kV rating suits medium-voltage systems, while the 50 A current capacity supports moderate power levels. Consider the press-fit installation method for improved thermal contact and mechanical stability. Evaluate the specific switching times against system frequency requirements to minimize losses. Compare thermal resistance values with alternative packages to ensure adequate heat dissipation for the intended duty cycle.

Part Context

This component belongs to Infineon's CoolSiC Module series, specifically designed for advanced power electronics. It integrates multiple SiC MOSFETs into a single press-fit unit, simplifying assembly compared to discrete solutions. The EasyDUAL form factor provides standardized interfaces for mounting and cooling. This series targets efficiency improvements in modern power converters by leveraging the superior material properties of silicon carbide over traditional silicon devices.