ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
FF2MR12KM1HPHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 1200V AG-62MMHB. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for FF2MR12KM1HPHPSA1
- Description：MOSFET 2N-CH 1200V AG-62MMHB
- Series：CoolSiC™
- Mfr：Infineon Technologies
- Package：Tray
- Technology：Silicon Carbide (SiC)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C：500A (Tc)
- Rds On (Max) @ Id, Vgs：2.13mOhm @ 500A, 15V
- Vgs(th) (Max) @ Id：5.15V @ 224mA
- Gate Charge (Qg) (Max) @ Vgs：1340nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds：39700pF @ 800V
- Power - Max：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：AG-62MMHB
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for FF2MR12KM1HPHPSA1
FET, MOSFET Arrays Overview
The FF2MR12KM1HPHPSA1 is a 62mm C-Series module with CoolSiC Trench MOSFET. It features VDSS of 1200 V, ID nom of 500 A at TC = 85°C, and ID pulse of 1000 A. RDS(on) ranges from 2.13 mΩ to 3.25 mΩ depending on temperature. QG is 1.34 µC. Eoss is 880 µJ. LsCE is 20 nH. Weight is 340 g.
FET, MOSFET Arrays Feature Summary
- High current density
- Low switching losses
FET, MOSFET Arrays Applications
- UPS systems
- Solar applications
- DC/DC converter
- High-frequency switching application
FET, MOSFET Arrays Procurement Notes
Verify the datasheet version matches the specific batch requirements. Confirm that the ordering suffix HPSA1 corresponds to the exact package and terminal configuration needed for your PCB footprint. Ensure compliance with IEC standards if industrial qualification is required.
FET, MOSFET Arrays Selection Notes
Select based on thermal resistance RthJC of 0.083 K/W per MOSFET. Consider gate charge QG of 1.34 µC for driver design. Evaluate stray inductance LsCE of 20 nH for circuit layout. Check operating junction temperature range of -40 to 150 °C.
FET, MOSFET Arrays Part Context
This component belongs to Infineon's CoolSiC MOSFET G1 series within the 62mm C-Series module family. It utilizes silicon carbide technology for high-efficiency power conversion. The module integrates two MOSFETs in a half-bridge configuration.
FET, MOSFET Arrays Replacement Considerations
FF2MR12KM1H
FET, MOSFET Arrays FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (ID pulse) is 1000 A.
What is the isolation test voltage?
The isolation test voltage (VISOL) is 4.0 kV RMS for 1 minute at 50 Hz.
What is the typical COSS stored energy?
The COSS stored energy (Eoss) is typically 880 µJ at TVj = 25°C and VDS = 800 V.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
