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Product Detailed Parameters
- Description：IGBT MOD 1700V 650A 3150W
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：2 Independent
- Vce(on) (Max) @ Vge, Ic：3.1V @ 15V, 400A
- Input：Standard
- NTC Thermistor：No
- Operating Temperature：-40°C ~ 125°C
- Mounting Type：Chassis Mount
- Package / Case：Module
- Supplier Device Package：Module
- Voltage - Collector Emitter Breakdown (Max)：1700 V
- Current - Collector (Ic) (Max)：650 A
- Power - Max：3150 W
- Current - Collector Cutoff (Max)：5 mA
- Input Capacitance (Cies) @ Vce：27 nF @ 25 V
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Overview
The FF401R17KF6C_B2 is a 1700 V IGBT inverter module featuring low-loss second-generation IGBTs and a soft Emitter Controlled Diode. It provides a continuous DC collector current of 400 A at TC = 80°C, with a repetitive peak collector current of 800 A. The total power dissipation reaches 3.15 kW at TC = 25°C. Key electrical parameters include a maximum collector-emitter voltage (VCES) of 1700 V, a gate-emitter peak voltage (VGES) of ±20 V, and an internal gate resistance (RGint) of 2.6 Ω. Thermal characteristics specify a junction-to-case thermal resistance (RthJC) of 40.0 K/kW for the IGBT and 68.0 K/kW for the diode.
Feature Summary
- Integrates low-loss second-generation IGBT technology for efficient switching performance.
- Incorporates a soft Emitter Controlled Diode to minimize reverse recovery effects.
- Features AlN internal basic insulation compliant with Class 1 protection standards.
Applications
- Industrial motor drives
- Medium voltage variable frequency drives
- Uninterruptible power supplies
Procurement Notes
Verify component authenticity by matching the part number against official Infineon documentation. Confirm that the datasheet revision aligns with the specific manufacturing batch requirements. Ensure compliance with RoHS directives and check for any specific handling precautions outlined in the application notes provided by the manufacturer.
Selection Notes
Evaluate the module's thermal management capabilities based on the specified RthJC values and operating temperature range of -40°C to 125°C. Consider the required gate drive voltages and resistances to optimize switching losses. Verify that the mechanical mounting torque specifications are met to ensure reliable electrical connections and heat dissipation.
Part Context
This component belongs to the FF series of high-power IGBT modules from Infineon Technologies. It utilizes advanced chip technologies designed for robust operation in demanding power electronics environments. The module integrates both the switching device and the freewheeling diode into a single package for compact system design.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement matches the 1700 V rating, 400 A current capacity, and compatible pinout configuration.
FAQ
What is the maximum short-circuit withstand time for this module?
The module can withstand a short-circuit condition for up to 10 µs when the junction temperature is 125°C and the collector current is limited to 1600 A.
What is the isolation test voltage rating?
The module supports an isolation test voltage of 4.0 kV RMS at 50 Hz for one minute.
What is the typical turn-on energy loss per pulse?
At IC = 400 A, VCE = 900 V, and Tvj = 25°C, the typical turn-on energy loss (Eon) is 190 mJ.
