FF4MR20KM1HHPSA1

$429.60

Description：MOSFET 2N-CH 2000V AG-62MMHB
Series：C

SKU:1fc5636b5668 Category: FET, MOSFET Arrays Brand: Infineon Technologies

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Product introduction

FF4MR20KM1HHPSA1 is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET 2N-CH 2000V AG-62MMHB. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for FF4MR20KM1HHPSA1

Description：MOSFET 2N-CH 2000V AG-62MMHB
Series：C
Mfr：Infineon Technologies
Package：Tray
Technology：Silicon Carbide (SiC)
Configuration：2 N-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：2000V (2kV)
Current - Continuous Drain (Id) @ 25°C：280A (Tc)
Rds On (Max) @ Id, Vgs：5.3mOhm @ 300A, 18V
Vgs(th) (Max) @ Id：5.15V @ 168mA
Gate Charge (Qg) (Max) @ Vgs：1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：36100pF @ 1.2kV
Power - Max：-
Operating Temperature：-40°C ~ 175°C (TJ)
Mounting Type：Chassis Mount
Package / Case：Module
Supplier Device Package：AG-62MMHB
Grade：-
Qualification：-

FET, MOSFET Arrays datasheet and documents for FF4MR20KM1HHPSA1

FF4MR20KM1HHPSA1

FET, MOSFET Arrays Overview

The FF4MR20KM1HHPSA1 is a CoolSiC Trench MOSFET half-bridge module from the 62 mm C-Series. It features a 2000 V drain-source voltage and supports a continuous DC drain current of 280 A at 175 °C junction temperature, with a repetitive peak current of 600 A. The on-state resistance is typically 3.5 mΩ at 25 °C. The module provides 4 kV AC isolation for one minute and operates within a junction temperature range of -40 °C to 175 °C.

FET, MOSFET Arrays Feature Summary

Utilizes CoolSiC Trench MOSFET technology for high current density and low switching losses.
Provides 4 kV AC insulation capability for enhanced safety in power circuits.
Qualified for industrial applications according to IEC 60747, 60749, and 60068 standards.

FET, MOSFET Arrays Applications

UPS systems
DC/DC converters
Solar applications
High-frequency switching applications

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix HHPSA1 against official Infineon documentation to confirm exact packaging and reel specifications. Ensure compatibility with recommended mounting torque values and thermal interface materials as defined in the application notes. Confirm that the component meets all relevant industrial qualification standards required for the target deployment environment.

FET, MOSFET Arrays Selection Notes

Select this module for designs requiring high voltage blocking capability and efficient thermal management. Consider the 62 mm form factor for standard heatsink integration. Evaluate gate drive requirements based on the specified internal gate resistance and total gate charge parameters to optimize switching performance and minimize electromagnetic interference during operation.

FET, MOSFET Arrays Part Context

This component belongs to the Infineon 62 mm C-Series, designed for compact power electronics. It integrates two N-channel SiC MOSFETs in a half-bridge configuration. The series emphasizes reliability and efficiency for demanding industrial environments, utilizing advanced trench gate technology to reduce conduction and switching energy losses compared to planar devices.

FET, MOSFET Arrays Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains identical voltage ratings, current capabilities, and package dimensions to fit existing mechanical constraints without redesigning the PCB or cooling system.