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The FF600R12KE4EBOSA2 is a dual IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT4 - E4 series. It features a common emitter configuration with a maximum collector-emitter voltage (VCEO) of 1.2 kV and a continuous collector current (Ic) of 600 A at 25°C. The typical collector-emitter saturation voltage (VCEsat) is 1.75 V, while the gate-emitter leakage current is specified at 400 nA. Operating within a temperature range of -40°C to +150°C, this silicon-based component utilizes a tray packaging format.
Verify the specific suffix EBOSA2 against official Infineon documentation to confirm exact ordering details, as datasheets often reference base part numbers like FF600R12KE4. Confirm RoHS compliance status and ensure the procurement channel provides valid traceability for industrial-grade components.
Select this module for applications requiring 1200 V blocking capability and 600 A continuous current handling. Ensure the thermal management system supports junction temperatures up to 150°C. Verify that the screw-mount installation style fits the mechanical constraints of the target inverter or converter design.
This component is part of the broader Trenchstop IGBT4 family, which includes variants such as FF600R12IE4 and FF300R12KE4. These modules share similar technological foundations but differ in package types, current ratings, and specific application optimizations within the industrial power semiconductor portfolio.
Direct substitutes include FF600R12KE4 and FF600R12KE4BOSA1. Verify pinout compatibility and thermal interface requirements before substitution, as packaging variations may exist between different suffix codes within the same technical specification.