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The FF75R12RT4HOSA1 is a TRENCHSTOP IGBT7 module manufactured by Infineon Technologies. It features a 1200 V collector-emitter voltage rating and a nominal continuous collector current of 75 A at 25°C. The device utilizes the EconoDUAL 3 package topology, integrating fast Trench Field-Stop IGBT technology with emitter-controlled diodes. Key electrical characteristics include a typical saturation voltage (Vce(sat)) of approximately 2.1 V at rated conditions. The module supports a maximum junction temperature of 175°C and includes an integrated NTC thermistor for thermal monitoring.
Verify the complete ordering code including the suffix HOSA1 to ensure correct RoHS compliance and specific packaging configuration. Confirm that the required datasheet version matches the production batch date code. Cross-reference the NTC resistance values with the specific thermal interface material specifications used in the target application design.
Select this component when a 1200 V rating and 75 A current capacity are required within a standard EconoDUAL 3 footprint. Consider the 175°C junction temperature capability for applications demanding higher thermal margins compared to older IGBT generations. Ensure gate drive circuits are compatible with the switching characteristics of the IGBT7 family.
This part belongs to the Infineon TRENCHSTOP IGBT7 product family, which represents an evolution from previous Trenchstop generations. It is designed to replace older IGBT modules in existing designs while offering improved efficiency. The EconoDUAL 3 package is a widely adopted standard in industrial power electronics for its mechanical robustness and thermal performance.
Direct replacements may include other 1200 V, 75 A IGBT7 modules in the EconoDUAL 3 package from Infineon, such as the FF75R12RT4 series without the specific suffix if pinout compatibility is verified. Always check the datasheet for differences in switching energy values and thermal resistance before substitution.