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Product Detailed Parameters
- Description：IGBT TRENCH 1250V 40A TO-3PN
- Series：-
- Mfr：onsemi
- Package：Tube,Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1250 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.5V @ 15V, 20A
- Power - Max：250 W
- Switching Energy：740µJ (on), 500µJ (off)
- Input Type：Standard
- Gate Charge：153 nC
- Td (on/off) @ 25°C：10ns/400ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The FGA20S125P-SN00336 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes silicon technology and is housed in a TO-3PN package designed for through-hole mounting. The device features a maximum collector-emitter voltage (VCEO) of 1250 V and a continuous collector current (Ic) of 20 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.4 V, a gate-emitter voltage range of -25 V to +25 V, and a power dissipation rating of 272 W. The component operates within a temperature range of -55°C to +175°C.
Feature Summary
- High voltage capability suitable for demanding power switching applications
- Robust thermal performance with high power dissipation rating
- Standardized TO-3PN packaging for reliable through-hole integration
Applications
- Induction heating systems
- Switched-mode power supplies (SMPS)
- Motor control inverters
Procurement Notes
Verify the specific suffix SN00336 against official datasheets to confirm terminal plating or tape-and-reel specifications. Confirm RoHS compliance status and REACH SVHC declarations directly from the manufacturer's documentation before procurement. Ensure the supplier provides valid traceability records for this discontinued or legacy part number.
Selection Notes
Select this component when a 1250 V IGBT with 20 A continuous current capacity is required in a TO-3PN package. Compare the 2.4 V saturation voltage against alternative devices to ensure efficiency targets are met. Verify that the thermal management solution can handle the 272 W power dissipation rating under worst-case operating conditions.
Part Context
This part belongs to the FGA20S125P series of high-voltage IGBTs from onsemi. The SN00336 suffix typically denotes specific manufacturing lot or packaging variations. It serves as a replacement for older discrete power transistors in high-power industrial applications requiring robust voltage handling and reliable switching characteristics.
Replacement Considerations
Consult onsemi's cross-reference tools for direct equivalents. Verify pinout compatibility and thermal resistance values when substituting with similar TO-3PN IGBTs from other manufacturers. Ensure voltage and current ratings meet or exceed original design requirements.
