FGA30S120P

Description：IGBT TRENCH FS 1300V 60A TO-3PN
Series：-

SKU:e1856319667f Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH FS 1300V 60A TO-3PN
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)：1300 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：150 A
Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 30A
Power - Max：348 W
Switching Energy：-
Input Type：Standard
Gate Charge：78 nC
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-3P-3, SC-65-3
Supplier Device Package：TO-3PN
Grade：-
Qualification：-

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FGA30S120P

Overview

The FGA30S120P is a 1300 V Insulated Gate Bipolar Transistor (IGBT) from onsemi, housed in a TO-3PN package. It features a continuous collector current of 60 A and a collector-emitter saturation voltage of 1.75 V. The device has a power dissipation rating of 348 W. It is scheduled for obsolescence and will be discontinued by the manufacturer.

Feature Summary

High-voltage insulation gate bipolar transistor design
Through-hole TO-3PN packaging

Applications

Industrial energy infrastructure
Solar power systems
Energy storage applications

Procurement Notes

Verify availability status carefully as this component is scheduled for obsolescence and will be discontinued by the manufacturer. Confirm final order quantities against remaining stock levels before committing to procurement. Review datasheet specifications thoroughly to ensure compatibility with existing system requirements prior to purchase.

Selection Notes

Select this IGBT for high-voltage applications requiring robust power handling capabilities. Consider the TO-3PN package for through-hole mounting needs. Evaluate thermal management solutions given the specified power dissipation ratings. Ensure system voltage requirements align with the 1300 V collector-emitter voltage specification.

Part Context

This component belongs to onsemi's portfolio of intelligent power and sensing technologies. It falls under the category of discrete devices and power modules, specifically within the IGBT segment designed for mission-critical power systems. The product line emphasizes exceptional quality and robust reliability for industrial applications.