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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 100A TO-3PN
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 50A
- Power - Max：268 W
- Switching Energy：1.35mJ (on), 309µJ (off)
- Input Type：Standard
- Gate Charge：72.2 nC
- Td (on/off) @ 25°C：20.8ns/62.4ns
- Test Condition：400V, 50A, 6Ohm, 15V
- Reverse Recovery Time (trr)：31.8 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3PN
- Grade：-
- Qualification：-
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Overview
The FGA5065ADF is a single silicon IGBT transistor manufactured by ON Semiconductor, formerly Fairchild Semiconductor. It utilizes TO-3PN through-hole packaging and supports continuous collector currents of up to 100 A at 25°C, with a maximum rated current of 50 A. The device features a collector-emitter breakdown voltage (VCEO) of 650 V and a gate-emitter maximum voltage of ±30 V. Key electrical parameters include a collector-emitter saturation voltage of 2.28 V, power dissipation of 268 W, and a gate-emitter leakage current of ±400 nA. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- High-voltage capability with 650 V collector-emitter breakdown rating for robust switching applications
- Integrated anti-parallel diode structure for efficient commutation in inverter circuits
- Low saturation voltage design to minimize conduction losses during high-current operation
Applications
- Motor drive inverters
- Switched-mode power supplies
- Induction heating systems
Procurement Notes
Verify the manufacturer marking on the component body, as ON Semiconductor acquired Fairchild's power division. Confirm the TO-3PN package style and pinout configuration match the target circuit board layout. Ensure the procurement source provides valid RoHS compliance documentation consistent with the specified manufacturing date codes.
Selection Notes
Select this component when a single N-channel IGBT with 650 V blocking capability is required. The TO-3PN package necessitates specific thermal management solutions due to its 268 W power dissipation rating. Verify that the gate drive voltage remains within the ±30 V limit to prevent dielectric breakdown.
Part Context
This part belongs to the FGA series of insulated-gate bipolar transistors designed for medium-to-high power switching. The 'ADF' suffix typically denotes specific binning or packaging variations within the Fairchild/ON Semiconductor portfolio. It serves as a discrete replacement for integrated modules in lower-power industrial applications.
Replacement Considerations
Direct substitutes include the FGA50N65SFD and FGH50N65SDF from ON Semiconductor, which share similar voltage and current ratings but may differ in package dimensions and thermal characteristics.
