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Product Detailed Parameters
- Description：IGBT TRENCH 330V 90A TO-3P
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：330 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：330 A
- Vce(on) (Max) @ Vge, Ic：1.4V @ 15V, 20A
- Power - Max：223 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：95 nC
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3, SC-65-3
- Supplier Device Package：TO-3P
- Grade：-
- Qualification：-
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Overview
The FGA90N33ATTU is a single silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It features a Trench technology design with a maximum collector-emitter voltage (VCEO) of 330 V and a continuous collector current (Ic) of 90 A. The device is housed in a TO-3PN-3 package designed for through-hole mounting. It operates within a temperature range of -55 °C to +150 °C, with a maximum gate-emitter voltage of ±20 V. This component belongs to the FGA90N33ATD series.
Feature Summary
- Utilizes Trench technology for optimized switching performance
- Designed for high-current applications with 90 A continuous rating
- Robust thermal capability supporting operation up to 150 °C
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify availability status carefully as this component may be subject to end-of-life or obsolescence notices. Confirm the specific suffix 'ATTU' matches the required datasheet specifications before ordering, as packaging quantities and lead times vary by distributor. Ensure the TO-3PN-3 through-hole form factor fits the target PCB layout constraints.
Selection Notes
Select this IGBT when a 330 V blocking voltage and 90 A current capacity are required in a standard TO-3PN package. Compare against the FGA90N30DTU if a 300 V rating is sufficient, noting the voltage margin difference. Ensure the gate drive circuit can supply the necessary charge for the Trench structure at the intended switching frequency.
Part Context
This part is part of the FGA90N33ATD series from onsemi, which includes variants like FGA90N33ATDTU. It shares the same core electrical characteristics but may differ in packaging or tape-and-reel configurations. It succeeds older Fairchild Semiconductor designs in the 90A/330V class.
Replacement Considerations
The FGA90N30DTU is a documented alternative within the same family offering similar current ratings but with a lower 300 V voltage rating. Verify that the system voltage headroom accommodates the reduced VCEO specification before substitution.
