FGB30N6S2D

Overview

The FGB30N6S2D is a 600V, SMPS II Series N-Channel IGBT with an integrated Anti-Parallel Stealth Diode. It features low gate charge (23 nC typical at VGE = 15V) and low plateau voltage (6.5V typical). The device supports continuous collector currents of 45 A at TC = 25°C and 20 A at TC = 110°C. It offers a switching safe operating area (SSOA) capability of 60A at 600V and is rated for 150 mJ pulsed avalanche energy (UIS). Operating frequencies reach 100 kHz at 390V/14A and 200 kHz at 390V/9A. The component is housed in a JEDEC TO-263AB surface-mount package.

Feature Summary

• Low gate charge and low plateau voltage design to reduce gate drive power requirements and shorten delay times.
• Integrated anti-parallel Stealth diode providing fast switching speed and low conduction loss.
• Rated for unclamped inductive switching (UIS) with 150 mJ avalanche energy capability.
• Optimized for high-voltage switched mode power supply applications requiring fast switching and low thermal resistance.

Applications

• Power Factor Correction (PFC) circuits
• Full bridge topologies
• Half bridge topologies
• Push-Pull circuits
• Uninterruptible power supplies (UPS)

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm the package type. The datasheet indicates that the 'FGB' prefix corresponds to the TO-263AB surface-mount package. Ensure compatibility with the required tape and reel specifications if automated assembly is planned.

Selection Notes

Select this component for designs prioritizing reduced gate drive losses and fast switching speeds in high-frequency environments. Evaluate the thermal management requirements based on the junction-to-case thermal resistance and the expected operating frequency relative to the collector current limits defined in the Safe Operating Area curves.

Part Context

This device belongs to the Fairchild Semiconductor SMPS II series of Low Gate Charge IGBTs. It shares core electrical characteristics with the FGH30N6S2D (TO-247) and FGP30N6S2D (TO-220AB), differing primarily in the physical mounting configuration provided by the TO-263AB package.

Replacement Considerations

Direct pin-compatible replacements within the same family include the FGH30N6S2D and FGP30N6S2D. Verify that any substitute maintains the required UIS rating and matches the thermal interface dimensions of the target PCB footprint.

FAQ

What is the maximum operating frequency for this device?

The device supports operation up to 100 kHz at 390V with a 14A load, and up to 200 kHz at 390V with a 9A load.

Does the FGB30N6S2D have internal gate protection?

No, the device does not contain an internal monolithic Zener diode from gate to emitter. External gate protection is recommended if necessary.

What is the typical fall time of the IGBT?

The typical fall time is 90 ns at a junction temperature of 125°C.