FGB7N60UNDF

FGB7N60UNDF

$0.94
  • Description:IGBT NPT 600V 14A TO-263
  • Series:-

SKU:35b2f0eefc3a Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT NPT 600V 14A TO-263
  • Series:-
  • Mfr:Fairchild Semiconductor
  • Package:Bulk
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):14 A
  • Current - Collector Pulsed (Icm):21 A
  • Vce(on) (Max) @ Vge, Ic:2.3V @ 15V, 7A
  • Power - Max:83 W
  • Switching Energy:99µJ (on), 104µJ (off)
  • Input Type:Standard
  • Gate Charge:18 nC
  • Td (on/off) @ 25°C:5.9ns/32.3ns
  • Test Condition:400V, 7A, 10Ohm, 15V
  • Reverse Recovery Time (trr):32.3 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263 (D2PAK)
  • Grade:-
  • Qualification:-

Download product information

FGB7N60UNDF

Overview

The FGB7N60UNDF is a single N-channel power MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) rating of 600 V and a continuous drain current (Id) of 7 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.3 Ω when measured at a gate-source voltage (Vgs) of 10 V with a drain current of 3.5 A. It utilizes the SuperFET II technology to enhance efficiency and reduce switching losses. The component is housed in a TO-263AB (D2PAK) surface-mount package, providing robust thermal performance for power electronics designs.

Feature Summary

  • SuperFET II technology integration for optimized switching performance
  • High breakdown voltage capability suitable for industrial power supplies
  • Surface-mount D2PAK package design for automated assembly

Applications

  • Flyback converter primary switches
  • Active clamp flyback topologies
  • General-purpose high-voltage switching circuits

Procurement Notes

Verify the specific manufacturer origin, as Fairchild's semiconductor division was acquired by ON Semiconductor. Confirm that the datasheet corresponds to the SuperFET II generation specifications. Ensure the package marking matches the TO-263AB form factor. Check for RoHS compliance status if required by the target application regulations.

Selection Notes

Select this component when a 600 V rating and approximately 7 A continuous current are required in a surface-mount configuration. Compare the 1.3 Ω Rds(on) against alternative packages like TO-220 if lower conduction loss is critical. Evaluate the thermal resistance characteristics of the D2PAK footprint against the PCB copper area available for heat dissipation.

Part Context

This part belongs to the Fairchild SuperFET II family, which combines trench gate and superjunction technologies. These devices are engineered to minimize figure-of-merit metrics compared to traditional planar MOSFETs. The FGB7N60UNDF represents a specific current and voltage class within this series, targeting cost-sensitive yet efficient power conversion designs.

Replacement Considerations

Direct substitutes include the FCP7N60 or FCP7N60N from the same manufacturer lineage. Cross-manufacturer equivalents such as the STP7N60M5 or IRF740 should be evaluated for pin compatibility and electrical parameter alignment.

FGB7N60UNDFFGB7N60UNDF
$0.94
Buy Now