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The FGB7N60UNDF is a single N-channel power MOSFET manufactured by Fairchild Semiconductor, designed for high-voltage switching applications. It features a drain-source voltage (Vdss) rating of 600 V and a continuous drain current (Id) of 7 A at 25°C case temperature. The device exhibits a maximum on-resistance (Rds(on)) of 1.3 Ω when measured at a gate-source voltage (Vgs) of 10 V with a drain current of 3.5 A. It utilizes the SuperFET II technology to enhance efficiency and reduce switching losses. The component is housed in a TO-263AB (D2PAK) surface-mount package, providing robust thermal performance for power electronics designs.
Verify the specific manufacturer origin, as Fairchild's semiconductor division was acquired by ON Semiconductor. Confirm that the datasheet corresponds to the SuperFET II generation specifications. Ensure the package marking matches the TO-263AB form factor. Check for RoHS compliance status if required by the target application regulations.
Select this component when a 600 V rating and approximately 7 A continuous current are required in a surface-mount configuration. Compare the 1.3 Ω Rds(on) against alternative packages like TO-220 if lower conduction loss is critical. Evaluate the thermal resistance characteristics of the D2PAK footprint against the PCB copper area available for heat dissipation.
This part belongs to the Fairchild SuperFET II family, which combines trench gate and superjunction technologies. These devices are engineered to minimize figure-of-merit metrics compared to traditional planar MOSFETs. The FGB7N60UNDF represents a specific current and voltage class within this series, targeting cost-sensitive yet efficient power conversion designs.
Direct substitutes include the FCP7N60 or FCP7N60N from the same manufacturer lineage. Cross-manufacturer equivalents such as the STP7N60M5 or IRF740 should be evaluated for pin compatibility and electrical parameter alignment.