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Product Detailed Parameters
- Description：IGBT 400V 7A TO-252
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：400 V
- Current - Collector (Ic) (Max)：7:00 AM
- Current - Collector Pulsed (Icm)：29 A
- Vce(on) (Max) @ Vge, Ic：1.6V @ 2.4V, 2.5A
- Power - Max：29 W
- Switching Energy：-
- Input Type：Logic
- Gate Charge：11 nC
- Td (on/off) @ 25°C：47ns/650ns
- Test Condition：300V, 2.5A, 51Ohm, 4V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252 (DPAK)
- Grade：-
- Qualification：-
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Overview
The FGD2N40L is a P-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor. It utilizes planar stripe DMOS technology to achieve low on-state resistance and superior switching performance. The device is rated for a drain-source voltage of -400V and supports continuous current handling suitable for high-voltage applications. Designed with fast switching capabilities and improved dv/dt characteristics, it withstands high energy pulses in avalanche and commutation modes. The component is packaged in a TO-252AA (DPAK) format for surface-mount installation.
Feature Summary
- Planar stripe DMOS technology minimizes on-state resistance while providing robust switching performance.
- Enhanced capability to withstand high energy pulses during avalanche and commutation operations.
- Optimized for complementary half-bridge topologies used in electronic lamp ballasts.
Applications
- Electronic lamp ballasts
- Complementary half-bridge circuits
- High-voltage DC-DC converters
Procurement Notes
Verify the manufacturer origin as Fairchild Semiconductor or its successor entity ON Semiconductor, noting that acquisition activities may affect branding on datasheets. Confirm the specific package marking matches the TO-252AA form factor. Ensure the part number suffix aligns with standard production variants without unverified functional changes.
Selection Notes
Select this component for designs requiring a -400V P-Channel switch with moderate current capacity. The TO-252AA package facilitates surface-mount assembly. Evaluate thermal management requirements based on the specific on-resistance at the operating gate voltage. Ensure the application leverages the device's fast switching and avalanche ruggedness.
Part Context
This part belongs to the QFET family of power MOSFETs from Fairchild Semiconductor. These devices are engineered for high-voltage efficiency. The FGD2N40L specifically targets P-Channel applications where complementary N-Channel counterparts like the FQA20N40 are also utilized in similar bridge configurations.
Replacement Considerations
The FQD2P40 is a documented similar part within the same product family offering identical -400V ratings and comparable electrical characteristics. Verify pinout compatibility between the TO-252AA packages before substitution.
