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The FGH20N6S2D is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi, formerly Fairchild Semiconductor. It belongs to the SMPS II Series and features a 600V collector-emitter breakdown voltage with a continuous collector current rating of 28A. The device utilizes a TO-220AB package and is designed for high-efficiency switching applications. Key electrical characteristics include a maximum power dissipation of 125W at 25°C case temperature.
Verify component authenticity through authorized distributors or certified suppliers. Check datasheets for specific ordering suffixes that may indicate tape-and-reel packaging versus tube configurations. Confirm RoHS compliance status as manufacturing processes evolve. Ensure proper handling procedures are followed due to electrostatic sensitivity.
Select this component for designs requiring 600V blocking capability with moderate current handling up to 28A. Evaluate thermal management requirements carefully given the 125W power dissipation limit in the TO-220AB package. Compare switching losses against alternative IGBT families if higher frequency operation is required. Ensure gate drive voltages align with standard logic-level or standard gate specifications.