FGH40T120SMD-F155

Overview

The FGH40T120SMD-F155 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes Silicon technology and features a Field Stop Trench architecture within a TO-247-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 80 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, a power dissipation rating of 555 W, and a gate-emitter voltage range of -25 V to +25 V. It operates reliably between -55°C and +175°C.

Feature Summary

• Field Stop Trench technology designed for high efficiency and low conduction losses
• Robust thermal performance with a 555 W power dissipation capability in a TO-247-3 package
• High voltage blocking capability suitable for demanding power switching applications

Applications

• Industrial motor drives and inverters
• Uninterruptible Power Supply (UPS) systems
• Solar inverters and photovoltaic energy conversion
• Induction heating equipment

Procurement Notes

Verify the specific suffix -F155 against the official datasheet to confirm packaging and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer's documentation before integration. Ensure the component is sourced from authorized distributors to guarantee authenticity and traceability.

Selection Notes

Select this component when a 1200V rating and 80A continuous current are required in a standard through-hole form factor. Compare the 1.8V saturation voltage against alternative devices to evaluate conduction loss trade-offs. Verify that the TO-247-3 footprint matches the target PCB design constraints.

Part Context

This part belongs to the FGH40T120SMD series of discrete IGBTs from onsemi. It shares the core electrical characteristics with the base model but includes specific manufacturing or packaging identifiers defined by the -F155 suffix. It is distinct from lower-voltage variants like the FGH40T100SMD.

Replacement Considerations

Direct pin-compatible substitutes may include other 1200V, 80A TO-247-3 IGBTs from different manufacturers, provided their saturation voltages and thermal resistances meet the original design requirements. Always verify gate charge and switching speed parameters.