FGH40T120SMD

Overview

The FGH40T120SMD is a single-channel silicon Insulated Gate Bipolar Transistor (IGBT) manufactured by onsemi. It utilizes FS2 Trench Field Stop technology and is housed in a TO-247-3 through-hole package. Key electrical parameters include a maximum collector-emitter voltage of 1.2 kV, a continuous collector current of 80 A at 25°C, and a saturation voltage of 1.8 V. The device supports a power dissipation of 555 W and operates within a junction temperature range of -55°C to +175°C.

Feature Summary

• FS2 Trench Field Stop technology for optimized switching performance
• Positive temperature coefficient for safe parallel operation
• High input impedance gate structure

Applications

• Industrial motor drives
• Switched-mode power supplies
• Inverter circuits

Procurement Notes

Verify the manufacturer part number against official onsemi documentation to ensure authenticity. Confirm that the component matches the specified TO-247-3 package and FS2 technology generation. Request relevant datasheets and compliance certificates from authorized distributors to validate technical specifications before integration into designs.

Selection Notes

Select this component when a 1200V rating and high current handling capability are required. The TO-247-3 package facilitates efficient thermal management for high-power applications. Ensure the drive circuit can accommodate the specified gate-emitter voltage limits and that the system design accounts for the 1.8 V saturation voltage drop at the target operating current.

Part Context

This discrete IGBT belongs to the FS2 product family from onsemi, designed for medium to high-power switching applications. It serves as a core switching element in power electronics systems requiring robust voltage blocking and efficient conduction characteristics.

Replacement Considerations

Direct replacements must match the 1200V/40A rating and TO-247-3 footprint. Verify compatibility with existing gate drive requirements and thermal constraints. Cross-reference specific switching times and saturation voltages to ensure equivalent performance in the target application.