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Product Detailed Parameters
- Description：IGBT FIELD STOP 600V 120A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：120 A
- Current - Collector Pulsed (Icm)：180 A
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 60A
- Power - Max：378 W
- Switching Energy：1.97mJ (on), 570µJ (off)
- Input Type：Standard
- Gate Charge：188 nC
- Td (on/off) @ 25°C：26ns/134ns
- Test Condition：400V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：55 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The FGH60N60SFDTU-F085 is a Field Stop IGBT manufactured by onsemi, designed for high-efficiency power switching. It features a 600 V collector-emitter voltage rating and supports a continuous collector current of 60 A at 100°C case temperature, with a peak pulsed current capability of 180 A. The device exhibits a low saturation voltage of 2.2 V at 60 A and operates within a junction temperature range of -55°C to +150°C. Packaged in a TO-247-3LD (CASE 340CK) through-hole housing, it integrates an anti-parallel diode with a forward voltage of 1.9 V at 30 A. Total switching losses are specified at 2.54 mJ under standard test conditions.
Feature Summary
- Utilizes Novel Field Stop IGBT technology to optimize performance for applications requiring low conduction and switching losses.
- Qualified to Automotive Requirements of AEC-Q101 for enhanced reliability in automotive environments.
- Features high input impedance and fast switching characteristics suitable for high-frequency operation.
Applications
- Automotive chargers
- Inverters
- High Voltage Auxiliaries
- PFC (Power Factor Correction)
- UPS (Uninterruptible Power Supplies)
Procurement Notes
Verify the specific ordering suffix F085 against the latest manufacturer documentation to confirm packing method and tube quantity specifications. Ensure that the TO-247-3LD package dimensions align with the target PCB footprint requirements. Confirm compliance with RoHS standards and Pb-free status as indicated in the official datasheet before finalizing component selection.
Selection Notes
Select this component for designs requiring robust 600V blocking capability combined with high current handling up to 120A pulsed. Consider the thermal resistance values when designing heatsinking solutions to maintain junction temperatures within the specified operating range. Evaluate gate drive requirements based on the total gate charge and switching loss characteristics provided in the electrical data.
Part Context
This part belongs to the FGH60N60SF series of Field Stop IGBTs from onsemi. It is distinct from MOSFET variants like the FCH20N60 due to its bipolar conduction mechanism and integrated diode structure. The device is specifically engineered to replace older generation IGBTs in high-power density applications where efficiency and thermal management are critical constraints.
Replacement Considerations
Direct substitutes must match the 600V/60A rating and TO-247-3LD package. Verify pinout compatibility and thermal resistance parameters. Cross-reference with other onsemi F-series devices or equivalent industry parts ensuring identical switching speeds and saturation voltages to maintain circuit performance integrity.
