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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 100A TO-247
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：100 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 50A
- Power - Max：268 W
- Switching Energy：223µJ (on), 91.13µJ (off)
- Input Type：Standard
- Gate Charge：99.7 nC
- Td (on/off) @ 25°C：22.8ns/70ns
- Test Condition：400V, 12.5A, 4.7Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGHL50T65SQDT is a Field Stop, Trench IGBT rated at 650 V collector-emitter voltage and 50 A continuous collector current. It utilizes novel field stop 4th generation technology to optimize performance for applications requiring low conduction and switching losses. The device features a maximum junction temperature of 175°C and a positive temperature coefficient for easy parallel operation. It includes an integrated anti-parallel diode with a forward current rating of 75 A at 25°C case temperature. The component is housed in a TO-247-3L package and is Pb-Free and RoHS compliant.
Feature Summary
- Utilizes novel field stop 4th generation technology for optimized performance
- Features a positive temperature coefficient facilitating easy parallel operation
- Provides high current capability with low saturation voltage
- Includes 100% testing for Inverse Leakage Current (ILM)
Applications
- Solar Inverter
- UPS
- Welder
- Telecom
- ESS
- PFC
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping configuration. Confirm that the requested part number matches the exact electrical ratings and thermal characteristics required for the design. Ensure compliance with environmental standards such as RoHS if applicable to the project requirements.
Selection Notes
Select this component for designs prioritizing low conduction and switching losses in power conversion circuits. Consider the 175°C maximum junction temperature for high-temperature environments. Evaluate the thermal resistance values to ensure adequate heat sinking is provided for the intended power dissipation levels under operating conditions.
Part Context
This IGBT belongs to onsemi's series of field stop 4th generation devices. These components are engineered to deliver optimum performance in applications where minimizing energy loss during switching and conduction phases is critical. The technology addresses the trade-offs between conduction and switching losses common in earlier generations.
Replacement Considerations
Check datasheets for other models within the FGHL50T65 series or similar 650V/50A IGBTs from onsemi to verify pinout compatibility and electrical parameter alignment before substitution.
