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Product Detailed Parameters
- Description：IGBT TRENCH FS 650V 80A TO-247-3
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max)：650 V
- Current - Collector (Ic) (Max)：80 A
- Current - Collector Pulsed (Icm)：300 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 75A
- Power - Max：375 W
- Switching Energy：1.94mJ (on), 1.55mJ (off)
- Input Type：Standard
- Gate Charge：145 nC
- Td (on/off) @ 25°C：33ns/176ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：36 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247-3
- Grade：-
- Qualification：-
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Overview
The onsemi FGHL75T65MQD is a Field Stop Trench IGBT utilizing mid-speed technology, rated for 650 V collector-emitter voltage and 75 A continuous collector current. It features a low saturation voltage of 1.45 V typical at 75 A and supports a maximum junction temperature of 175°C. The device is housed in a TO-247-3L package with long leads and includes a full-current-rated copak diode. Thermal resistance from junction to case is 0.40 °C/W for the IGBT and 0.6 °C/W for the diode.
Feature Summary
- Field stop 4th generation mid speed IGBT technology
- Full current rated copak Diode technology
- Positive Temperature Coefficient for easy parallel operation
- Smooth and optimized switching characteristics
Applications
- Solar Inverter
- UPS, ESS
- PFC, Converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and check for any recent product change notifications or lifecycle updates before finalizing procurement plans.
Selection Notes
Select this component for applications requiring mid-speed switching performance with high current capability. Ensure thermal management design accounts for the specified junction-to-case thermal resistance values under expected operating temperatures and load conditions.
Part Context
This part belongs to onsemi's Field Stop Trench IGBT lineup, designed for power conversion efficiency. It integrates a fast recovery diode within the same package, simplifying circuit design for half-bridge configurations commonly found in renewable energy and industrial power supplies.
Replacement Considerations
Check datasheet compatibility for pinout and electrical ratings when substituting. Verify thermal impedance curves and switching loss characteristics match the original design requirements to ensure system reliability.
FAQ
What is the maximum pulsed collector current?
The maximum pulsed collector current (ILM) is 300 A.
Is the device compliant with environmental standards?
Yes, the FGHL75T65MQD is RoHS compliant.
What is the gate-emitter threshold voltage range?
The gate-emitter threshold voltage ranges from 3.0 V to 6.0 V.
