FGL60N100BNTD

Description：IGBT NPT/TRENCH 1000V 60A TO-264
Series：-

SKU:4cb279810613 Category: Single IGBTs Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：IGBT NPT/TRENCH 1000V 60A TO-264
Series：-
Mfr：onsemi
Package：Tube
IGBT Type：NPT and Trench
Voltage - Collector Emitter Breakdown (Max)：1000 V
Current - Collector (Ic) (Max)：60 A
Current - Collector Pulsed (Icm)：120 A
Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 60A
Power - Max：180 W
Switching Energy：-
Input Type：Standard
Gate Charge：275 nC
Td (on/off) @ 25°C：140ns/630ns
Test Condition：600V, 60A, 51Ohm, 15V
Reverse Recovery Time (trr)：1.2 µs
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-264-3, TO-264AA
Supplier Device Package：TO-264-3
Grade：-
Qualification：-

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FGL60N100BNTD

Overview

The FGL60N100BNTD is a single NPT-Trench Insulated Gate Bipolar Transistor manufactured by onsemi. It features a maximum collector-emitter voltage of 1000 V and a continuous collector current of 60 A. The device has a maximum power dissipation of 176 W and operates within a junction temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 230 nC, a reverse recovery time of 1.5 µs, and a maximum saturation voltage of 2.9 V at 15 V gate drive and 60 A collector current. It is housed in a TO-264AA (TO-264-3) through-hole package.

Feature Summary

Utilizes NPT-Trench technology for optimized switching performance
Designed for high-voltage industrial applications with robust thermal stability

Applications

Industrial motor drives
High-frequency inverters
Uninterruptible power supplies

Part Context

This component belongs to the FGL6 series of IGBTs from onsemi, which are designed for medium-power applications. The part was originally developed by Fairchild Semiconductor before its acquisition by onsemi. It represents a standard trench-gate technology solution for general-purpose high-voltage switching.