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The FGPF30N30 is a Power Dissipation Package (PDP) Insulated Gate Bipolar Transistor manufactured by onsemi. It features a 300V collector-emitter voltage rating and a continuous collector current of 30A. The device utilizes PDP technology for high power density and reliability. It is designed for use in motor control, motion control, and ignition controller applications. The component is currently listed as obsolete with limited supply availability.
Verify authenticity through authorized channels due to obsolete status. Check for PCNs regarding barcoding or material changes. Confirm package integrity and pinout compatibility before integration into existing designs.
Select this component for high-power switching applications requiring 300V isolation. Ensure thermal management aligns with the PDP package characteristics. Consider alternative IGBTs if new design constraints require active production support.
This part belongs to the onsemi IGBT portfolio, specifically the PDP series. It succeeded earlier Fairchild Semiconductor products following corporate restructuring. The FGPF30N30 represents a legacy solution for industrial power electronics.
FGPF30N45TTU offers similar packaging but higher voltage rating.