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Product Detailed Parameters
- Description：IGBT FS 1200V 200A TO-247-4L
- Series：-
- Mfr：onsemi
- Package：Tube
- IGBT Type：Field Stop
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：200 A
- Current - Collector Pulsed (Icm)：640 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 160A
- Power - Max：1500 W
- Switching Energy：4.2mJ (on), 5.9mJ (off)
- Input Type：Standard
- Gate Charge：474 nC
- Td (on/off) @ 25°C：60.8ns/236.8ns
- Test Condition：600V, 160A, 4Ohm, 15V
- Reverse Recovery Time (trr)：264.1 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-4
- Supplier Device Package：TO-247-4L
- Grade：-
- Qualification：-
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Overview
The FGY4L160T120SWD is a single N-channel Field Stop VII (FS7) IGBT with an integrated Gen7 Diode, housed in a TO-247-4L package. It features a collector-emitter voltage of 1200 V and a continuous collector current of 160 A at 100°C. The device exhibits a typical saturation voltage of 1.7 V at 25°C and supports a maximum junction temperature of 175°C. Thermal resistance from junction to case is 0.10 °C/W for the IGBT and 0.16 °C/W for the diode. Total switching loss is 10.1 mJ at 160 A, 600 V, and 25°C.
Feature Summary
- Field Stop VII technology combined with Gen7 Diode for optimized performance
- Positive temperature coefficient enabling easy parallel operation
- Smooth and optimized switching characteristics
- High current capability with low conduction losses
Applications
- Solar Inverter
- UPS
- Energy Storage System
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and compliance status. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions. Confirm that gate drive parameters align with the recommended test conditions for switching performance validation.
Selection Notes
Select this component when high efficiency and robust parallel operation are required in power conversion systems. The FS7 technology provides a balance between low conduction and switching losses. Evaluate the thermal impedance curves for transient load conditions to ensure the junction temperature remains within the 175°C limit during peak current events.
Part Context
This part belongs to onsemi's FS7 IGBT family, designed for high-efficiency power applications. It utilizes advanced field stop technology to reduce energy waste. The TO-247-4L package facilitates efficient heat dissipation and simplified circuit layout compared to traditional three-terminal packages.
Replacement Considerations
Direct substitutes include other FS7 series devices with compatible voltage and current ratings. Verify pinout compatibility, specifically the additional emitter terminal in the TO-247-4L package, when replacing legacy TO-247-3 variants.
