FH2164

Overview

The FH2164 is an RF Power MOSFET Transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of 30 MHz to 90 MHz and utilizes Silicon technology. The device features a Drain-Source Breakdown Voltage (Vds) of 65 V and supports a Continuous Drain Current (Id) of 4 A. Key electrical specifications include an output power capability of 8 W, a supply voltage of 12 V, and a gain of 13 dB.

Feature Summary

• Silicon-based RF Power MOSFET construction
• High power output capability for RF applications
• Designed for operation in the 30 MHz to 90 MHz frequency band

Applications

• RF power amplification
• Broadband transmitter systems
• Industrial, Scientific, and Medical (ISM) equipment

Procurement Notes

Verify that the specific order matches the FH2164 part number from MACOM Technology Solutions. Confirm technical requirements align with the 65 V breakdown voltage and 4 A continuous drain current limits. Ensure compatibility with the 12 V supply voltage and 30–90 MHz operational frequency range before finalizing procurement decisions.

Selection Notes

Select the FH2164 when designing circuits requiring 8 W of RF power output within the 30–90 MHz spectrum. Consider its 65 V breakdown voltage and 4 A current handling capabilities for robust performance. Evaluate thermal management needs due to the power dissipation characteristics inherent to this silicon MOSFET technology.

Part Context

The FH2164 belongs to the category of RF FETs and MOSFETs produced by MACOM Technology Solutions. It serves as a discrete semiconductor component designed for high-frequency power amplification tasks. The device is distinct from evaluation boards or passive components like couplers found in related product lines.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.