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The IXYS FID36-06D is a high-power IGBT module integrating an NPT IGBT and a HiPerFRED diode in an ISOPLUS i4-PAC package. It features a 600 V collector-emitter voltage (VCES) and a continuous collector current of 38 A at 25°C case temperature. The IGBT exhibits a typical saturation voltage of 1.9 V, while the integrated diode provides a forward voltage of 2.5 V. Thermal resistance from junction to case is 1.0 K/W for the IGBT and 2.3 K/W for the diode. The device supports a maximum operating junction temperature of 150°C and includes an isolated back surface with a 2500 V~ isolation voltage.
Verify component authenticity through authorized IXYS distributors or certified suppliers. Confirm datasheet revision status and specific lot traceability requirements before procurement. Ensure storage conditions align with semiconductor handling standards to maintain device integrity prior to assembly.
Select this module for applications requiring robust switching performance at medium frequencies. Evaluate thermal management capabilities against the specified junction-to-case thermal resistance values. Ensure gate drive voltages remain within the ±20 V limit and verify that peak currents do not exceed the non-repetitive short-circuit withstand capability.
This component belongs to the FID series of integrated IGBT modules manufactured by IXYS. It combines switching and freewheeling functions into a single unit to simplify circuit topology. The ISOPLUS packaging facilitates direct mounting to heatsinks while maintaining electrical isolation between the active components and the cooling structure.
No official substitutes are documented. When evaluating alternatives, match the 600 V rating, 38 A current capacity, and ISOPLUS i4-PAC mechanical footprint. Verify that replacement devices offer comparable switching losses and thermal resistance characteristics to ensure system compatibility.