FJAFS1720TU

Single Bipolar Transistors Overview

The FJAFS1720TU is an NPN bipolar junction transistor (BJT) manufactured by Fairchild Semiconductor. It features a collector-emitter voltage rating of 800 V and a continuous collector current capacity of 12 A. The device operates with a transition frequency of 15 MHz and supports a maximum power dissipation of 60 W. Packaged in the TO-3PF through-hole format, this component is designed for high-voltage switching applications requiring robust performance.

Single Bipolar Transistors Feature Summary

• ESBC™ rated construction for optimized switching performance
• High voltage capability suitable for demanding power circuits
• Through-hole mounting for reliable mechanical stability

Single Bipolar Transistors Applications

• High-voltage power switching circuits
• Industrial control systems
• Motor drive applications

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as the part may be discontinued or obsolete. Confirm datasheet specifications against current inventory to ensure compatibility with existing designs. Check for alternative sources if original production has ceased.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high voltage isolation and moderate current handling. Ensure thermal management strategies align with the 60 W power dissipation limit. Verify that the TO-3PF package fits within the designated PCB layout constraints.

Single Bipolar Transistors Part Context

Fairchild Semiconductor was a pioneering American electronics company known for inventing the integrated circuit. The FJAFS1720TU represents their legacy in discrete power transistors, utilizing advanced silicon technology for industrial and military-grade reliability before the company's acquisition by ON Semiconductor.

Single Bipolar Transistors Replacement Considerations

Consult official replacement lists from ON Semiconductor, which acquired Fairchild's assets. Verify pinout compatibility and electrical parameters when substituting with equivalent NPN power transistors.