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FJP13007H2TU-F080 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 8A TO-220-3. Review the specifications below when checking this part for your BOM.
The FJP13007H2TU-F080 is a discontinued high-voltage fast-switching NPN power transistor manufactured by onsemi. It utilizes Multi Epitaxial Planar technology and features a Cellular Emitter structure to enhance switching speeds. The device is housed in a TO-220 3L Dual Gauge package with a rail packing method. Key electrical ratings include a collector-base voltage of 700 V, a collector-emitter voltage of 400 V, and a continuous collector current of 8 A. It supports a maximum collector dissipation of 80 W at 25°C case temperature and operates up to a junction temperature of 150°C.
This component is officially discontinued and not recommended for new designs. Verify availability through authorized distributors or onsemi representatives. Confirm the H2 hFE classification (26 to 39) matches circuit requirements. Check datasheet revision 2 for accurate specifications before integration.
Select this part only if existing designs require its specific pinout and thermal characteristics. Ensure the 400V collector-emitter rating meets system voltage needs. Consider the 8A continuous current limit and 80W power dissipation constraints. Evaluate alternative components as this device is obsolete.
The FJP13007 series belongs to onsemi's lineup of high-voltage bipolar junction transistors. The H2 suffix indicates a specific DC current gain binning range. This family targets robust performance in high-frequency power conversion environments where fast turn-on and turn-off times are critical.
MJE13007G is an official substitute listed by onsemi.
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