Single Bipolar Transistors FJP13007H2TU-F080 product image

FJP13007H2TU-F080

  • Description:TRANS NPN 400V 8A TO-220-3
  • Series:-

SKU:99db2306fa03 Category: Brand:

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FJP13007H2TU-F080 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 400V 8A TO-220-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for FJP13007H2TU-F080

  • Description:TRANS NPN 400V 8A TO-220-3
  • Series:-
  • Mfr:onsemi
  • Package:Tube
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):8:00 AM
  • Voltage - Collector Emitter Breakdown (Max):400 V
  • Vce Saturation (Max) @ Ib, Ic:3V @ 2A, 8A
  • Current - Collector Cutoff (Max):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:8 @ 2A, 5V
  • Power - Max:80 W
  • Frequency - Transition:4MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220-3

Single Bipolar Transistors datasheet and documents for FJP13007H2TU-F080

FJP13007H2TU-F080

Single Bipolar Transistors Overview

The FJP13007H2TU-F080 is a discontinued high-voltage fast-switching NPN power transistor manufactured by onsemi. It utilizes Multi Epitaxial Planar technology and features a Cellular Emitter structure to enhance switching speeds. The device is housed in a TO-220 3L Dual Gauge package with a rail packing method. Key electrical ratings include a collector-base voltage of 700 V, a collector-emitter voltage of 400 V, and a continuous collector current of 8 A. It supports a maximum collector dissipation of 80 W at 25°C case temperature and operates up to a junction temperature of 150°C.

Single Bipolar Transistors Feature Summary

  • High voltage capability suitable for demanding power applications
  • Fast switching speed enabled by cellular emitter structure
  • Tight gain range selection for reliable operation

Single Bipolar Transistors Applications

  • Electronic ballasts
  • Switching mode power supplies
  • High voltage high speed power switching

Single Bipolar Transistors Procurement Notes

This component is officially discontinued and not recommended for new designs. Verify availability through authorized distributors or onsemi representatives. Confirm the H2 hFE classification (26 to 39) matches circuit requirements. Check datasheet revision 2 for accurate specifications before integration.

Single Bipolar Transistors Selection Notes

Select this part only if existing designs require its specific pinout and thermal characteristics. Ensure the 400V collector-emitter rating meets system voltage needs. Consider the 8A continuous current limit and 80W power dissipation constraints. Evaluate alternative components as this device is obsolete.

Single Bipolar Transistors Part Context

The FJP13007 series belongs to onsemi's lineup of high-voltage bipolar junction transistors. The H2 suffix indicates a specific DC current gain binning range. This family targets robust performance in high-frequency power conversion environments where fast turn-on and turn-off times are critical.

Single Bipolar Transistors Replacement Considerations

MJE13007G is an official substitute listed by onsemi.

FJP13007H2TU-F080FJP13007H2TU-F080

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