FMM150-0075X2F

FET, MOSFET Arrays Overview

The FMM150-0075X2F is an N-Channel Power MOSFET from the TrenchT2 HiperFET series, designed for phase leg topology. It features a 75 V drain-source breakdown voltage and a continuous drain current of 120 A at 25°C case temperature. The device exhibits a maximum on-resistance of 5.8 mΩ and supports a peak pulsed current of 500 A. Packaged in an ISOPLUS i4-Pak with an isolated tab, it provides 2500 V electrical isolation between leads and the mounting surface. Thermal performance includes a junction-to-case resistance of 0.88 °C/W and a power dissipation rating of 170 W.

FET, MOSFET Arrays Feature Summary

• Utilizes Silicon Chip on Direct-Copper Bond (DCB) substrate technology for high thermal conductivity.
• Features an isolated mounting surface providing 2500 V electrical isolation for simplified heat sinking.
• Avalanche rated to withstand energy stresses up to 850 mJ.
• Engineered for low gate charge and low package inductance to support high-speed switching applications.

FET, MOSFET Arrays Applications

• DC-DC Converters
• Battery Chargers
• Switched-Mode and Resonant-Mode Power Supplies
• DC Choppers
• AC Motor Drives

FET, MOSFET Arrays Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking with the official datasheet specifications. Confirm that the received part matches the ISOPLUS i4-Pak outline dimensions and pin configuration. Ensure thermal interface materials are compatible with the isolated tab design to maintain specified thermal resistance values during installation.

FET, MOSFET Arrays Selection Notes

Select this component for designs requiring high power density and galvanic isolation between the circuit ground and heatsink. The 75 V rating suits low-voltage high-current applications. Evaluate the 5.8 mΩ on-resistance against conduction loss requirements. Consider the 2500 V isolation capability when selecting insulation barriers or creepage distances in the PCB layout.

FET, MOSFET Arrays Part Context

This device belongs to the IXYS TrenchT2 HiperFET family, which employs trench gate technology to optimize switching speed and conduction efficiency. The ISOPLUS i4-Pak package distinguishes itself by integrating the power terminal with the thermal management structure while maintaining electrical isolation. This architecture reduces parasitic inductance compared to traditional through-hole packages.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the electrical isolation rating of the FMM150-0075X2F?

The device provides 2500 V RMS electrical isolation between the leads and the mounting tab when tested at 50/60 Hz for one minute.

Is the FMM150-0075X2F avalanche rated?

Yes, the datasheet specifies that the device is avalanche rated with an avalanche energy capability of 850 mJ at a case temperature of 25°C.

What is the maximum transient thermal impedance characteristic?

Figure 19 in the datasheet illustrates the maximum transient thermal impedance from junction to case (ZthJC), showing the thermal response over pulse widths ranging from 10 microseconds to 10 seconds.