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Product Detailed Parameters
- Description：RF TRANS NPN 15V 600MHZ SOT-23-3
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：15V
- Frequency - Transition：600MHz
- Noise Figure (dB Typ @ f)：6dB @ 60MHz
- Gain：15dB
- Power - Max：330mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 3mA, 1V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The FMMT918TA is an NPN silicon planar transistor designed for VHF/UHF applications, manufactured by Diodes Incorporated. It features a collector-emitter voltage of 15V and a continuous collector current of 100mA. The device dissipates up to 330mW at 25°C and operates within a temperature range of -55°C to +150°C. Key electrical characteristics include a transition frequency of 600MHz, a static forward current transfer ratio (hFE) of 20, and a common emitter power gain of 15dB at 200MHz. Packaged in SOT-23, it offers low noise figures and capacitance values suitable for high-frequency signal processing.
Feature Summary
- Optimized for VHF and UHF frequency operations with a high transition frequency of 600MHz
- Provides significant RF power gain of 15dB at 200MHz for efficient signal amplification
- Features low noise figure performance suitable for sensitive receiver front-ends
- Utilizes compact SOT-23 surface-mount packaging for space-constrained designs
Applications
- VHF/UHF amplifier stages
- RF oscillator circuits
- High-frequency signal processing modules
Procurement Notes
Verify the component against the official Diodes Incorporated datasheet to confirm pinout alignment and absolute maximum ratings. Ensure that the operating conditions remain within the specified limits for collector current and power dissipation. Confirm RoHS compliance status through the manufacturer's latest documentation before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring high-frequency performance up to UHF bands. Consider the 100mA current limit and 330mW power dissipation capabilities during thermal management planning. Evaluate the hFE and noise figure parameters against specific application requirements to ensure adequate signal integrity and amplification efficiency.
Part Context
This part belongs to the FMMT series of small-signal transistors from Diodes Incorporated. It shares the SOT-23 package form factor with other devices in the lineup but is specifically characterized for superior high-frequency response compared to standard general-purpose transistors.
Replacement Considerations
Consult the official datasheet for direct equivalent part numbers or cross-reference guides provided by Diodes Incorporated to ensure functional compatibility.
