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The FMMV2109TA is a silicon planar variable capacitance diode manufactured by Diodes Incorporated in an SOT-23 package. It features a reverse voltage rating of 30 V and a forward current capacity of 200 mA, with power dissipation at 25°C limited to 330 mW. The device operates within a temperature range of -55°C to +150°C. At 4V reverse bias and 1MHz frequency, it provides a nominal capacitance of 33 pF (ranging from 29.3 pF to 36.3 pF). Key electrical characteristics include a maximum reverse current of 20 nA at 25V, a series inductance of 3.0 nH at 250MHz, and a Q factor of 280 minimum at 50MHz.
Verify the specific ordering suffix TA against official Diodes Incorporated documentation to confirm tape-and-reel packaging specifications. Ensure the component matches the exact datasheet revision referenced for the FMMV2109 series. Cross-reference the part marking code '6N' on received units to validate authenticity and correct model identification before integration into production.
Select this component when a nominal capacitance near 33 pF is required at low reverse bias voltages. Consider the 30 V breakdown voltage and 20 nA leakage current limits for sensitive RF front-end designs. Evaluate the 3.0 nH series inductance impact on high-frequency performance above 250 MHz. Compare the Q factor of 280 against alternative varactors to ensure sufficient selectivity for the target application bandwidth.
The FMMV2109 belongs to the FMMV210x series of silicon planar variable capacitance diodes produced by Diodes Incorporated. This family includes variants ranging from FMMV2101 to FMMV2109, each offering distinct nominal capacitance values while sharing identical package dimensions and absolute maximum ratings. The series is designed specifically for RF tuning applications requiring stable performance across wide temperature ranges.
Direct substitutes within the same series include FMMV2101 through FMMV2108, though their nominal capacitances differ significantly. Verify that any replacement maintains the required Q factor and series inductance specifications for the specific RF frequency band.