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The FP100R12N3T7 is a three-phase PIM IGBT module in the EconoPIM™3 package, utilizing TRENCHSTOP™ IGBT7 technology. It features a collector-emitter voltage of 1200 V and a nominal continuous DC collector current of 100 A at TC = 100 °C. The device supports overload operation up to a junction temperature of 175 °C. Key electrical parameters include a typical VCEsat of 1.50 V at 25 °C and a forward voltage of 1.72 V for the integrated emitter-controlled diode. The module incorporates an NTC thermistor with a rated resistance of 5 kΩ at 25 °C.
Verify the specific ordering suffix BPSA1 against the manufacturer's current documentation to confirm availability and exact configuration. Confirm compliance with RoHS directives and check for any preliminary status updates that may affect final qualification. Ensure sourcing channels provide valid traceability data for industrial-grade components.
Select this component for designs requiring a 1200 V rating with 100 A continuous current capacity. Consider the low saturation voltage for efficiency gains in motor drive applications. Verify that the mounting torque meets the specified 6 Nm requirement for the M5 screws. Ensure the heatsink interface maintains the required thermal resistance values for optimal junction temperature management.
This part belongs to Infineon's EconoPIM™3 series, which combines IGBTs and diodes in a compact form factor. The T7 designation indicates the use of TRENCHSTOP™ IGBT7 technology, offering improved switching characteristics compared to previous generations. The module is intended for industrial power conversion systems where reliability and thermal performance are critical.
Direct substitutes within the same family include FP100R12N3T7BPSA2. Cross-family replacements such as FP100R12KT4PBPSA1 require verification of pinout compatibility and thermal resistance differences. Always validate mechanical dimensions and electrical parameters before substituting.