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Product Detailed Parameters
- Description：LOW POWER ECONO AG-ECONO3-3
- Series：*
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP150R07N3E4B16BOSA1 is a Trench/Fieldstop IGBT4-E4 module from Infineon Technologies, part of the EconoPIM family. It features a 3-phase inverter configuration with a maximum collector-emitter voltage (VCEO) of 650 V and a continuous collector current of 150 A at 25°C. The saturation voltage is 1.55 V, with a power dissipation of 430 W. Operating temperatures range from -40°C to +150°C. The component utilizes silicon technology and is housed in a tray package.
Feature Summary
- Utilizes Trench/Fieldstop IGBT4-E4 technology for optimized switching performance
- Integrated NTC thermistor for precise thermal monitoring
- Designed for three-phase inverter applications
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the exact suffix against official datasheets, as variations like E4 or BOSA1 may indicate specific manufacturing batches or regional compliance standards. Confirm RoHS and REACH SVHC status through manufacturer documentation before integration. Ensure the supplier provides traceable origin data to maintain quality assurance protocols during procurement.
Selection Notes
Select this module for applications requiring high current density and robust thermal management within a compact form factor. The 650V rating suits medium-voltage industrial systems. Evaluate thermal resistance requirements against the 430W dissipation limit. Ensure gate drive compatibility with standard IGBT control signals for reliable operation.
Part Context
This component belongs to Infineon's EconoPIM series, designed for space-efficient power conversion. The IGBT4-E4 generation offers improved short-circuit capability and lower switching losses compared to previous iterations. It serves as a core switching element in high-power density inverters.
Replacement Considerations
Direct replacements include FP150R07N3E4. Verify pinout and thermal interface compatibility when substituting. Cross-reference electrical parameters such as Vceo and Ic to ensure equivalent performance in the target circuit design.
