ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：FP15R12KE3G - 1200 V, 15 A PIM T
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
Download product information
Overview
The FP15R12KE3GBOSA1 is a single-chip Insulated Gate Bipolar Transistor (IGBT) module manufactured by Infineon Technologies. It features a NPT (Non-Punch Through) technology design with a maximum collector-emitter voltage of 1200 V and a continuous collector current rating of 15 A at 25°C. The device has a maximum power dissipation of 100 W and operates within a junction temperature range of -40°C to 150°C. It utilizes a flange mount package configuration for secure installation.
Feature Summary
- NPT technology for robust hard-switching performance
- High thermal stability up to 150°C junction temperature
- Flange mount design for efficient heat sinking
Applications
- Industrial motor drives
- Uninterruptible Power Supplies (UPS)
- Inverter circuits
Procurement Notes
Verify the specific suffix BOSA1 against official Infineon documentation to confirm exact pinout and mechanical tolerances, as suffixes often denote specific packaging or testing variations. Ensure compatibility with existing gate drive requirements and thermal management solutions before integration into final designs.
Selection Notes
Select this component for applications requiring moderate current handling in a compact flange-mount form factor. Compare its 15A rating and 1200V blocking capability against system load requirements. Consider the 150°C max operating temperature for high-thermal environments where standard 125°C rated devices may be insufficient.
Part Context
This part belongs to the broader FP series of IGBT modules from Infineon, which are designed for general-purpose power switching applications. The 'KE3' designation typically indicates TrenchSTOP™ technology generation, offering optimized switching losses compared to previous generations within the same voltage and current class.
Replacement Considerations
Direct replacements should maintain the 1200V/15A specification and flange mount footprint. Verify if alternative suffixes like G or BOSA1 offer identical electrical characteristics. Cross-reference with other Infineon FP series variants for potential drop-in upgrades with improved thermal or switching metrics.
