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The FP15R12YT3BOMA1 is a silicon IGBT module from Infineon Technologies, belonging to the Trenchstop IGBT3 series. It features a 3-phase inverter configuration with a maximum collector-emitter voltage of 1.2 kV and a continuous collector current of 25 A at 25°C. The saturation voltage is 1.7 V, and the gate-emitter leakage current is 400 nA. Operating temperatures range from -40°C to +125°C. The module utilizes screw mount installation within an EASY2 package.
Verify the specific suffix BOMA1 against official datasheets to confirm exact packaging and handling specifications. Ensure compatibility with existing thermal interface materials and mounting hardware requirements for the EASY2 form factor before integration into final designs.
Select this component when a 1.2 kV rating and 25 A current capacity are required for three-phase applications. Consider the 125°C maximum junction temperature limit for thermal design calculations. Compare against newer Trenchstop generations if lower switching losses or higher temperature ratings are necessary for the specific application constraints.
This part is part of the broader Infineon IGBT module portfolio, specifically utilizing the EasyPIM/Easy2 packaging family. It represents the Trenchstop IGBT3 generation, which offers a balance of cost-effectiveness and performance for standard industrial frequency ranges compared to newer field-stop technologies.
Direct replacements may include other FP15R12 variants with different saturation voltages or current ratings within the same package. Verify pinout compatibility and thermal characteristics when substituting with newer series like Trenchstop IGBT4 or IGBT7 modules.