SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The FP25R12W2T4BOMA1 is a three-phase inverter IGBT module from Infineon Technologies, utilizing Trench/Fieldstop IGBT4 technology. It features a 1200 V collector-emitter voltage and a continuous DC collector current of 39 A at 25°C (25 A at 100°C). The saturation voltage is 1.85 V at 25°C. Total power dissipation is 175 W. Operating temperature ranges from -40°C to +150°C. The module includes an integrated NTC thermistor with a rated resistance of 5 kΩ at 25°C. It uses the EasyPIM 2B package with screw mounting.
Verify the specific ordering suffix BOMA1 against official documentation to confirm exact configuration details. Ensure compatibility with EasyPIM 2B mechanical dimensions and torque specifications during assembly. Confirm RoHS compliance status through the manufacturer's latest release notes before finalizing procurement orders.
Select this component for applications requiring a 1200 V rating and up to 39 A continuous current. Consider the 1.85 V saturation voltage for conduction loss calculations. Verify that the system can accommodate the 175 W total power dissipation and that the operating junction temperature remains within the specified -40°C to +150°C range under all load conditions.
This part belongs to the Infineon EasyPIM series, designed for compact three-phase inverter applications. It integrates six IGBTs and six diodes into a single module. The T4 generation indicates the use of Trench/Fieldstop technology, which offers improved switching characteristics compared to previous generations while maintaining robust industrial reliability.
FP25R12W2T4_B11
The maximum repetitive peak collector current is 50 A for a pulse width of 1 ms.
The gate-emitter leakage current is limited to 400 nA at 25°C with a gate-emitter voltage of 20 V.
The isolation test voltage is 2.5 kV RMS at 50 Hz for 1 minute.