FP35R12KT4B11BOSA1

Overview

The FP35R12KT4B11BOSA1 is a three-phase inverter IGBT module from Infineon Technologies, utilizing Trench Fieldstop IGBT4 technology and EmCon4 diodes. It features a 1200 V collector-emitter breakdown voltage and a continuous collector current of 35 A. The maximum power dissipation is rated at 210 W, with a typical saturation voltage of 2.15 V at 35 A. Operating within a junction temperature range of -40°C to 150°C, the component employs an EconoPIM™ 2 flange-mount package.

Feature Summary

• Integrates Trench Fieldstop IGBT4 and EmCon4 diode technologies for optimized switching performance.
• Configured as a three-phase inverter bridge rectifier within a compact EconoPIM™ 2 housing.
• Includes an integrated NTC thermistor for precise thermal monitoring.

Applications

• Three-phase motor drives
• Induction heating systems
• Air conditioning units

Procurement Notes

Verify the specific suffix B11BOSA1 against official datasheets to confirm pinout and terminal configuration. Confirm RoHS3 compliance status directly with the manufacturer or authorized distributors. Ensure proper handling procedures are followed due to the flange-mount mechanical design requirements.

Selection Notes

Select this module for applications requiring 1200 V blocking capability and 35 A continuous current. Verify that the system's thermal management can handle the 210 W power dissipation limit. Ensure the gate drive voltage aligns with the standard input specifications for IGBT4 technology.

Part Context

This component belongs to the FP35R12 series, which shares the same electrical ratings but may differ in packaging or terminal variants. It is part of Infineon's EconoPIM™ 2 family, designed for high-density power conversion applications requiring robust three-phase configurations.

Replacement Considerations

Direct substitutes include other FP35R12KT4 variants such as FP35R12KT4_B15 or FP35R12KT4_B16BOSA1. Verify pin compatibility and thermal characteristics before substitution.