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Product Detailed Parameters
- Description：EASY STANDARD
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP35R12W2T7PB11BPSA1 is a Power Integrated Module (PIM) from Infineon Technologies, utilizing Trenchstop IGBT7 technology. It features a half-bridge configuration with integrated anti-parallel diodes. The module supports a maximum collector-emitter voltage of 1200 V and a continuous collector current of 35 A at 25°C. It employs PressFIT terminal technology for board mounting and operates within a junction temperature range up to 175°C.
Feature Summary
- Integrates Trenchstop IGBT7 technology for optimized switching performance and low conduction losses.
- Features PressFIT terminals enabling solderless installation and enhanced mechanical stability.
- Incorporates robust short-circuit protection mechanisms suitable for demanding industrial environments.
Applications
- Electric vehicle charging systems
- Energy storage inverters
- Industrial motor drives
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to ensure correct pinout and thermal characteristics. Confirm that the PressFIT termination style matches the target PCB design requirements. Cross-reference the datasheet revision to validate electrical parameters before finalizing component selection for production.
Selection Notes
Select this module for applications requiring high reliability in medium-power scenarios. Ensure the gate driver compatibility aligns with the IGBT7 threshold specifications. Verify thermal management solutions can handle the specified power dissipation levels under maximum load conditions.
Part Context
This component belongs to the Easy PIM series designed for compact power electronics. It combines MOSFET input impedance with BJT low saturation voltage advantages. The package integrates multiple semiconductor chips into a single robust housing for efficient system integration.
Replacement Considerations
Direct substitutes require matching the 1200V/35A rating and half-bridge topology. Verify footprint compatibility due to the unique PressFIT terminal arrangement. Check thermal resistance values to ensure equivalent heat dissipation capabilities in the existing assembly.
