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The FP50R12KT4BPSA1 is an EconoPIM™2 module integrating Trench/Fieldstop IGBT4 and Emitter Controlled 4 diodes. It features a collector-emitter voltage of 1200 V, continuous DC collector current of 50 A at TC=95°C, and total power dissipation of 280 W at TC=25°C. The inverter IGBT has a saturation voltage of 1.85 V to 2.25 V depending on temperature. Rectifier diodes support 1600 V reverse voltage with 70 A RMS forward current per chip. The brake-chopper IGBT handles 25 A continuous current. Operating junction temperature ranges from -40°C to 150°C for switching components and up to 175°C for rectifiers.
Verify the specific ordering suffix BPSA1 against official Infineon documentation to confirm compliance with RoHS directives and packaging specifications. Ensure that the component matches the intended application requirements regarding thermal resistance and mounting torque before procurement. Cross-reference datasheet revision numbers to guarantee accurate electrical parameters are used during design validation.
Select this module for applications requiring integrated rectification, inversion, and braking capabilities. Consider the 1200 V rating for standard industrial bus voltages. Evaluate thermal management needs based on the specified junction-to-case thermal resistance values. Confirm that the operating temperature range meets the environmental conditions of the target system.
This component belongs to the EconoPIM™2 series from Infineon Technologies. It combines multiple power semiconductor functions into a single housing to reduce footprint and stray inductance. The series utilizes advanced IGBT4 and EmCon4 technologies to balance switching losses and conduction efficiency for industrial power electronics applications.
Public confirmed substitute part numbers: FP50R12KT4G, FP50R12KT4.