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The FP50R12KT4GB15BOSA1 is a three-phase PIM IGBT module utilizing Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technology. It features a collector-emitter voltage of 1200 V, a continuous DC collector current of 50 A at 95°C case temperature, and a repetitive peak collector current of 100 A. The total power dissipation is 280 W at 25°C. The module includes an integrated NTC thermistor with a nominal resistance of 5 kΩ at 25°C. Operating junction temperatures range from -40°C to 150°C for switching conditions, with a maximum junction temperature of 175°C.
Verify the exact ordering suffix against official Infineon documentation to confirm specific packaging or material compliance details. Ensure the component matches the required electrical ratings for your application before procurement. Cross-reference the datasheet revision date to ensure you are using the most current technical specifications.
Select this module for applications requiring robust thermal cycling performance and low conduction losses. Consider the 1200 V rating and 50 A continuous current capacity when designing the power stage. Verify that the gate drive circuitry can handle the specified internal gate resistance and input capacitance values for optimal switching performance.
This component belongs to the EconoPIM3 series from Infineon Technologies. It combines rectifier, inverter, and brake-chopper functions into a single compact package. The module is designed for industrial applications where space constraints and thermal efficiency are critical factors in system design.
Public confirmed substitute part numbers: None identified in verified source material.