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Product Detailed Parameters
- Description：FP75R12 - IGBT MODULE
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Configuration：-
- Vce(on) (Max) @ Vge, Ic：-
- Input：-
- NTC Thermistor：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Power - Max：-
- Current - Collector Cutoff (Max)：-
- Input Capacitance (Cies) @ Vce：-
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Overview
The FP75R12KT4BOSA1 is a three-phase PIM IGBT module from Infineon's EconoPIM™3 series, utilizing Trenchstop IGBT4 technology. It integrates fast Trench/Fieldstop IGBTs and Emitter Controlled diodes with an NTC sensor. Key electrical parameters include a collector-emitter voltage (VCES) of 1200 V and a nominal continuous DC collector current (IC nom) of 75 A at TC = 95°C. The repetitive peak collector current (ICRM) is 150 A. At Tvj = 25°C, the collector-emitter saturation voltage (VCEsat) is typically 2.15 V. The gate-emitter peak voltage (VGES) is +/-20 V. Total power dissipation is rated at 385 W at TC = 25°C. Operating junction temperature ranges from -40°C to +150°C.
Feature Summary
- Integrates fourth-generation fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode technologies for optimized switching performance.
- Includes an integrated NTC temperature sensor for reliable thermal monitoring within the standard housing.
- Features a copper base plate and solder contact technology to ensure high power cycling and thermal cycling capability.
Applications
- Servo drives
- Medical applications
- Motor drives
- Auxiliary inverters
Procurement Notes
Verify the specific ordering suffix BOSA1 against official Infineon documentation to confirm exact manufacturing details. Confirm that the component matches the required pinout and mechanical dimensions for the target PCB or heatsink interface. Ensure compliance with RoHS standards as indicated in the datasheet specifications.
Selection Notes
Select this module for applications requiring a compact three-phase inverter solution with integrated braking chopper capabilities. Evaluate the thermal resistance values (RthJC) against the system's cooling capacity to maintain junction temperatures within the specified limits. Consider the internal gate resistor values when designing the gate driver circuitry for optimal switching speed control.
Part Context
This component belongs to the EconoPIM™3 family, designed for industrial and general-purpose power conversion. It combines inverter legs with a rectifier bridge and a brake-chopper IGBT into a single package. The module utilizes Trenchstop IGBT4 technology to balance low conduction losses with efficient switching characteristics suitable for medium-power motor drive systems.
Replacement Considerations
Direct replacements must match the 1200V rating, 75A current class, and EconoPIM™3 footprint. Verify compatibility of the integrated NTC sensor characteristics if thermal management relies on the onboard thermistor.
FAQ
What is the maximum operating junction temperature for the FP75R12KT4?
The maximum operating junction temperature (Tvj op) is specified as 150°C in the datasheet.
Does the module include a braking chopper function?
Yes, the module integrates a dedicated IGBT and diode pair configured for a brake-chopper application alongside the three-phase inverter and rectifier.
What is the typical value of the internal gate resistor (RGint) for the inverter IGBT?
The typical internal gate resistor (RGint) for the inverter IGBT is 10 Ω at Tvj = 25°C.
